MOSFET N-CH 8V 40MA SOT-143

 

BF 2040 E6814

Manufacturer Part NumberBF 2040 E6814
DescriptionMOSFET N-CH 8V 40MA SOT-143
ManufacturerInfineon Technologies
BF 2040 E6814 datasheets

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Specifications of BF 2040 E6814

Package / CaseSOT-143, SOT-143B, TO-253AATransistor TypeN-Channel
Frequency800MHzGain23dB
Voltage - Rated8VCurrent Rating40mA
Noise Figure1.6dBCurrent - Test15mA
Voltage - Test5VConfigurationSingle Dual Gate
Transistor PolarityN-ChannelDrain-source Breakdown Voltage8 V
Gate-source Breakdown Voltage7 VContinuous Drain Current0.04 A
Power Dissipation200 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Channel TypeNChannel ModeDepletion
Drain Source Voltage (max)8VPower Gain (typ)@vds23@5VdB
Noise Figure (max)2.2dBFrequency (max)1GHz
Package TypeSOT-143Pin Count3 +Tab
Forward Transconductance (typ)0.042SInput Capacitance (typ)@vds2.9@5V@Gate 1pF
Operating Temp Range-55C to 150CMountingSurface Mount
Number Of Elements1Power Dissipation (max)200mW
Screening LevelMilitaryLead Free Status / RoHS StatusLead free / RoHS Compliant
Power - Output-Other namesBF2040E6814XT
SP000012215
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Silicon N-Channel MOSFET Tetrode
For low noise , high gain controlled
input stages up to 1GHz
Operating voltage 5 V
Pb-free (RoHS compliant) package
Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
BF2040
SOT143
BF2040R
SOT143R
BF2040W
SOT343
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
76 °C, BF2040, BF2040R
S
T
94 °C, BF2040W
S
Storage temperature
Channel temperature
Thermal Resistance
Parameter
1)
Channel - soldering point
BF2040, BF2040R
BF2040W
1
For calculation of R thJA please refer to Application Note Thermal Resistance
Pin Configuration
1=S
2=D
3=G2
4=G1
1=D
2=S
3=G1
4=G2
1=D
2=S
3=G1
4=G2
Symbol
V
DS
I
D
I
G1/2SM
+V
G1SE
P
tot
T
stg
T
ch
Symbol
R
thchs
1
BF2040...
Marking
-
-
NFs
-
-
NFs
-
-
NFs
Value
Unit
8
V
40
mA
10
7
V
mW
200
200
°C
-55 ... 150
150
Value
Unit
K/W
370
280
2007-06-01

BF 2040 E6814 Summary of contents

  • Page 1

    Silicon N-Channel MOSFET Tetrode For low noise , high gain controlled input stages up to 1GHz Operating voltage 5 V Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package BF2040 SOT143 ...

  • Page 2

    Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

  • Page 3

    Electrical Characteristics at T Parameter AC Characteristics - (verified by random sampling) Forward transconductance mA G2S Gate1 input capacitance mA ...

  • Page 4

    Total power dissipation P BF2040, BFD2040R 220 mW 180 160 140 120 100 Drain current G2S ...

  • Page 5

    Gate 1 current G1S Parameter G2S 195 µA 165 150 135 120 105 0.4 0.8 1.2 1.6 Drain current ...

  • Page 6

    Drain current G2S R = Parameter Crossmodulation V ...

  • Page 7

    Cossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BF2040... 4n7 RL 50 Semibiased 2007-06-01 ...

  • Page 8

    Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

  • Page 9

    Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

  • Page 10

    Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

  • Page 11

    ... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...