BG 3123 E6327 Infineon Technologies, BG 3123 E6327 Datasheet

no-image

BG 3123 E6327

Manufacturer Part Number
BG 3123 E6327
Description
MOSFET N-CH DUAL 8V 25MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG 3123 E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA, 20mA
Noise Figure
1.8dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
SP000014846
DUAL N-Channel MOSFET Tetrode
BG3123
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG3123
BG3123R
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Two gain controlled input stages for UHF
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
and VHF -tuners e.g. (NTSC, PAL)
BG3123R
Package
SOT363
SOT363
6
1
B
A
5
2
4
3
1=G1*
1=G1*
2=G2
2=S
1
Pin Configuration
3=D*
3=D*
AGC
Input
RF
4=D**
4=D**
RG1
VGG
G2
G1
5=S
5=G2
6
5
GND
4
6=G1**
6=G1**
Drain
BG3123...
2007-04-26
RF Output
1
Marking
KOs
KRs
+ DC
2
3

Related parts for BG 3123 E6327

BG 3123 E6327 Summary of contents

Page 1

DUAL N-Channel MOSFET Tetrode Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) Optimized for UHF (amp. B) and VHF (amp. A) Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter 1) Channel - soldering point 1 For calculation ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance MHz, amp MHz, amp. B Output capacitance MHz, amp. ...

Page 5

Total power dissipation P amp. A 300 mW 200 150 100 Drain current G2S amp ...

Page 6

Output characteristics 4V Parameter in V G2S G1S amp Gate 1 current G1S V ...

Page 7

Gate 1 forward transconductance 5V G2S amp Drain current G1S V = ...

Page 8

Drain current amp 5V 4V G2S G1 (connected =gate1 supply voltage ...

Page 9

Crossmodulation V = (AGC) unw amp.A 120 dBµV 100 Crossmodulation amp.B 120 dBµV 100 ...

Page 10

Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG3123... 4n7 RL 50 Semibiased 2007-04-26 ...

Page 11

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 12

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords