BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet

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BG 3123R E6327

Manufacturer Part Number
BG 3123R E6327
Description
MOSFET N-CH DUAL 8V SOT-363R
Manufacturer
Infineon Technologies
Datasheets

Specifications of BG 3123R E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA, 20mA
Noise Figure
1.8dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BG3123RE6327XT
SP000015126
DUAL N-Channel MOSFET Tetrode
BG3123
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BG3123
BG3123R
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Two gain controlled input stages for UHF
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
and VHF -tuners e.g. (NTSC, PAL)
BG3123R
Package
SOT363
SOT363
6
1
B
A
5
2
4
3
1=G1*
1=G1*
2=G2
2=S
1
Pin Configuration
3=D*
3=D*
Symbol
V
I
P
T
T
D
I
V
stg
ch
DS
tot
AGC
G1/2SM
Input
G1/G2S
RF
4=D**
4=D**
RG1
VGG
G2
G1
5=S
5=G2
-55 ... 150
6
5
GND
4
Value
200
150
25
20
8
1
6
6=G1**
6=G1**
Drain
BG3123...
2006-06-21
RF Output
1
Marking
KOs
KRs
+ DC
2
3
Unit
V
mA
V
mW
°C

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BG 3123R E6327 Summary of contents

Page 1

DUAL N-Channel MOSFET Tetrode Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) Optimized for UHF (amp. B) and VHF (amp. A) Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation ...

Page 2

Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance MHz, amp MHz, amp. B Output capacitance MHz, amp. ...

Page 4

Total power dissipation P amp. A 300 mW 200 150 100 Drain current G2S amp ...

Page 5

Output characteristics 4V Parameter in V G2S G1S amp Gate 1 current G1S V ...

Page 6

Gate 1 forward transconductance 5V G2S amp Drain current G1S V = ...

Page 7

Drain current amp 5V 4V G2S G1 (connected =gate1 supply voltage ...

Page 8

Crossmodulation V = (AGC) unw amp.A 120 dBµV 100 Crossmodulation amp.B 120 dBµV 100 ...

Page 9

Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG3123... 4n7 RL 50 Semibiased 2006-06-21 ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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