BLF177CR,112 NXP Semiconductors, BLF177CR,112 Datasheet
BLF177CR,112
Specifications of BLF177CR,112
BLF177CR
BLF177CR
Related parts for BLF177CR,112
BLF177CR,112 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors HF/VHF power MOS transistor FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch. APPLICATIONS Designed for industrial and military applications in the HF/VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap ...
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... NXP Semiconductors HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base ...
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... NXP Semiconductors HF/VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage difference of GS matched pairs g forward transconductance fs R drain-source on-state resistance ...
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... NXP Semiconductors HF/VHF power MOS transistor 0 handbook, halfpage T.C. (mV/ valid for Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 400 handbook, halfpage R DSon (m ) 300 200 100 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. MGP090 handbook, halfpage ...
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... NXP Semiconductors HF/VHF power MOS transistor 300 handbook, halfpage C rs (pF) 200 100 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB test circuit (see Fig.13 0.2 K/ mb-h L MODE OF ...
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... NXP Semiconductors HF/VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-AB operation 0 28.000 MHz 28.001 MHz Fig.9 Power gain as a function of load power; typical values. 20 handbook, halfpage d 3 (dB 100 Class-AB operation 0 28.000 MHz 28.001 MHz Fig.11 Third order intermodulation distortion as a function of load power; typical values. ...
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... NXP Semiconductors HF/VHF power MOS transistor handbook, full pagewidth input D.U. Fig.13 Test circuit for class-AB operation. Rev January 2007 Product specification C9 C12 C14 L6 output 50 C15 C10 C11 C13 MGP095 BLF177 ...
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... NXP Semiconductors HF/VHF power MOS transistor List of components class-AB test circuit (see Fig.13) COMPONENT DESCRIPTION C1, C4, C13, C14 film dielectric trimmer C2 multilayer ceramic chip capacitor (note 1) C3, C11 multilayer ceramic chip capacitor (note 1) C5, C6 multilayer ceramic chip capacitor C7 multilayer ceramic chip capacitor ...
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... NXP Semiconductors HF/VHF power MOS transistor 10 handbook, halfpage Class-AB operation 0 150 W (PEP 6. 6. Fig.14 Input impedance as a function of frequency (series components); typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19 0.2 K/W; R ...
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... NXP Semiconductors HF/VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-B operation 100 mA 15 108 MHz. GS Fig.16 Power gain as a function of load power; typical values. 200 handbook, halfpage P L (W) 100 Class-B operation 100 mA 15 108 MHz. GS Fig.18 Load power as a function of input power; ...
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... NXP Semiconductors HF/VHF power MOS transistor handbook, full pagewidth input D.U.T. L4 BLF177 C11 Fig.19 Test circuit for class-B operation at 108 MHz. Rev January 2007 Product specification C17 C13 C15 C18 L7 L8 C14 C16 L5 C9 C10 C12 C19 MGP104 BLF177 output ...
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... NXP Semiconductors HF/VHF power MOS transistor List of components class-B test circuit (see Fig.19) COMPONENT DESCRIPTION C1, C2, C16, C18 film dielectric trimmer C3 multilayer ceramic chip capacitor (note 1) C4, C5 multilayer ceramic chip capacitor (note 1) C6, C7, C9, C10 multilayer ceramic chip capacitor (note 1) C8 ...
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... NXP Semiconductors HF/VHF power MOS transistor handbook, full pagewidth strap Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets ...
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... NXP Semiconductors HF/VHF power MOS transistor 4 handbook, halfpage 100 Class-B operation 0 150 Fig.21 Input impedance as a function of frequency (series components); typical values. handbook, halfpage Fig.23 Definition of transistor impedance. MGP107 10 handbook, halfpage 200 f (MHz) Class-B operation 150 Fig.22 Load impedance as a function of frequency ...
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... NXP Semiconductors HF/VHF power MOS transistor BLF177 scattering parameters 100 mA; note (MHz 0.86 110.20 10 0.83 139.40 20 0.85 155.70 30 0.88 161.50 40 0.90 164.90 50 0.92 167.10 60 0.94 169.00 70 0.96 170.70 80 0.96 172.20 90 0.97 173.40 100 0.97 174.30 125 0.99 176.50 150 0.99 178.10 175 0 ...
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... NXP Semiconductors HF/VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 7.27 5.82 0.16 12.86 mm 6.17 5.56 12.59 0.10 0.286 0.229 0.006 0.506 inches 0.243 0.219 0.004 ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BLF177_N_6 20070124 • Modifications: correction made to figure title of Fig.13 • correction made to note 2 on page 9 • correction made to note 2 on page 13 • correction made to figure note of Fig.20 BLF177_5 20041217 (9397 750 14416) ...