BLF2043,135 NXP Semiconductors, BLF2043,135 Datasheet

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BLF2043,135

Manufacturer Part Number
BLF2043,135
Description
TRANSISTOR UHF PWR LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043,135

Transistor Type
LDMOS
Frequency
2GHz
Gain
12.5dB
Voltage - Rated
75V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Package / Case
SOT467C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
2.2A
Drain Source Voltage (max)
75V
Output Power (max)
10W
Power Gain (typ)@vds
11.8(Min)@26VdB
Frequency (max)
2.2GHz
Package Type
CDIP SMD
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
11@26VpF
Output Capacitance (typ)@vds
9@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33(Min)%
Mounting
Surface Mount
Mode Of Operation
2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934055916135
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2043
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 10
M3D438
2003 Feb 10

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BLF2043,135 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 10 M3D438 2003 Feb 10 ...

Page 2

Philips Semiconductors UHF power LDMOS transistor FEATURES Typical 2-tone performance at a supply voltage and mA: DQ – Output power = 10 W (PEP) – Gain = 12 dB – Efficiency = 36.5% – ...

Page 3

Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to heatsink th j-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V ...

Page 4

Philips Semiconductors UHF power LDMOS transistor 15 handbook, halfpage (dB Fig.2 Power gain and efficiency as functions of peak envelope load power; typical values. 0 handbook, halfpage d im ...

Page 5

Philips Semiconductors UHF power LDMOS transistor 10 handbook, halfpage 1 mA ...

Page 6

Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth V gate C17 output 2003 Feb Fig.9 Class-AB test circuit ...

Page 7

Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 8 and 9) COMPONENT C1, C2 multilayer ceramic chip capacitor; note 1 6 multilayer ceramic chip capacitor; note 1 1.0 pF C4, C10, C11 tekelec variable capacitor; ...

Page 8

Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric ( Fig.10 Component layout for 2 GHz class-AB test circuit. 2003 Feb 10 ...

Page 9

Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 1.35 ...

Page 10

Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 11

Philips Semiconductors UHF power LDMOS transistor 2003 Feb 10 NOTES 11 Product specification BLF2043 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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