BLF2043,135

Manufacturer Part NumberBLF2043,135
DescriptionTRANSISTOR UHF PWR LDMOS SOT467C
ManufacturerNXP Semiconductors
BLF2043,135 datasheet
 


Specifications of BLF2043,135

Transistor TypeLDMOSFrequency2GHz
Gain12.5dBVoltage - Rated75V
Current Rating2.2ACurrent - Test85mA
Voltage - Test26VPower - Output10W
Package / CaseSOT467CApplicationUHF
Channel TypeNChannel ModeEnhancement
Continuous Drain Current2.2ADrain Source Voltage (max)75V
Output Power (max)10WPower Gain (typ)@vds11.8(Min)@26VdB
Frequency (max)2.2GHzPackage TypeCDIP SMD
Pin Count3Forward Transconductance (typ)0.5S
Drain Source Resistance (max)1200(Typ)@10VmohmInput Capacitance (typ)@vds11@26VpF
Output Capacitance (typ)@vds9@26VpFReverse Capacitance (typ)0.5@26VpF
Operating Temp Range-65C to 200CDrain Efficiency (typ)33(Min)%
MountingSurface MountMode Of Operation2-Tone Class-AB/CW Class-AB
Number Of Elements1Vswr (max)10
Screening LevelMilitaryLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-Other names934055916135
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2043
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 10
M3D438
2003 Feb 10

BLF2043,135 Summary of contents

  • Page 1

    DISCRETE SEMICONDUCTORS DATA SHEET BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 10 M3D438 2003 Feb 10 ...

  • Page 2

    Philips Semiconductors UHF power LDMOS transistor FEATURES Typical 2-tone performance at a supply voltage and mA: DQ – Output power = 10 W (PEP) – Gain = 12 dB – Efficiency = 36.5% – ...

  • Page 3

    Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to heatsink th j-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V ...

  • Page 4

    Philips Semiconductors UHF power LDMOS transistor 15 handbook, halfpage (dB Fig.2 Power gain and efficiency as functions of peak envelope load power; typical values. 0 handbook, halfpage d im ...

  • Page 5

    Philips Semiconductors UHF power LDMOS transistor 10 handbook, halfpage 1 mA ...

  • Page 6

    Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth V gate C17 output 2003 Feb Fig.9 Class-AB test circuit ...

  • Page 7

    Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 8 and 9) COMPONENT C1, C2 multilayer ceramic chip capacitor; note 1 6 multilayer ceramic chip capacitor; note 1 1.0 pF C4, C10, C11 tekelec variable capacitor; ...

  • Page 8

    Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric ( Fig.10 Component layout for 2 GHz class-AB test circuit. 2003 Feb 10 ...

  • Page 9

    Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 1.35 ...

  • Page 10

    Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

  • Page 11

    Philips Semiconductors UHF power LDMOS transistor 2003 Feb 10 NOTES 11 Product specification BLF2043 ...

  • Page 12

    Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...