BLF2043,135 NXP Semiconductors, BLF2043,135 Datasheet - Page 3

• Manufacturer Part Number: BLF2043,135
• Description: TRANSISTOR UHF PWR LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2043,135

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 12.5dB
• Voltage - Rated: 75V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11.8(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: CDIP SMD
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 11@26VpF
• Output Capacitance (typ)@vds: 9@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33(Min)%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055916135

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2003 Feb 10
R
V
V
I
I
I
g
R
C
C
C
CW, class-AB (2-tone)
j
DSS
DSX
GSS
MODE OF OPERATION
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF power LDMOS transistor
thermal resistance from junction to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
DS
PARAMETER
= 26 V; f = 2000 MHz at rated load power.
f
1
= 2000; f
PARAMETER
(MHz)
f
2
= 2000.1
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
V
(V)
26
h
DS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= 10 V; I
= 0; V
= 0; V
= 0; V
= 25 C; R
3
GSth
CONDITIONS
D
DS
DS
DS
DS
= 0.2 mA
+ 9 V; V
D
D
D
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
(mA)
I
= 20 mA
= 0.75 A
= 0.75 A
85
DS
DQ
T
th mb-h
mb
= 0
DS
= 25 C; note 1
= 0.4 K/W, unless otherwise specified.
CONDITIONS
10 (PEP)
= 10 V
(W)
P
L
65
4
2.8
MIN.
>11.8
(dB)
G
p
0.5
1.2
11
9
0.5
TYP.
Product specification
VALUE
>33
(%)
9
D
BLF2043
5
1.5
40
MAX.
(dBc)
UNIT
K/W
V
V
A
nA
S
pF
pF
pF
d
UNIT
A
im
26