BLF2043,135 NXP Semiconductors, BLF2043,135 Datasheet - Page 4

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BLF2043,135

Manufacturer Part Number
BLF2043,135
Description
TRANSISTOR UHF PWR LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043,135

Transistor Type
LDMOS
Frequency
2GHz
Gain
12.5dB
Voltage - Rated
75V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Package / Case
SOT467C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
2.2A
Drain Source Voltage (max)
75V
Output Power (max)
10W
Power Gain (typ)@vds
11.8(Min)@26VdB
Frequency (max)
2.2GHz
Package Type
CDIP SMD
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
11@26VpF
Output Capacitance (typ)@vds
9@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33(Min)%
Mounting
Surface Mount
Mode Of Operation
2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934055916135
Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
Fig.2
(1) I
(2) I
(3) I
Fig.4
(dBc)
d im
(dB)
G p
15
10
10
20
30
40
50
DQ
DQ
DQ
5
0
0
0
0
= 55 mA.
= 85 mA.
= 115 mA.
Power gain and efficiency as functions of
peak envelope load power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power and
I
DQ
(1)
(3)
(2)
setting; typical values.
5
5
G p
D
10
10
15
15
P L (PEP) (W)
P L (PEP) (W)
MCE017
MCE019
20
20
60
40
20
0
(%)
D
4
handbook, halfpage
Fig.3
(dBc)
d im
20
40
60
80
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
5
10
d 3
d 5
d 7
Product specification
15
P L (PEP) (W)
BLF2043
MCE018
20

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