MRFG35003NR5 Freescale Semiconductor, MRFG35003NR5 Datasheet

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MRFG35003NR5

Manufacturer Part Number
MRFG35003NR5
Description
TRANSISTOR RF 3W 12V POWER FET
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35003NR5

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
11.5dB
Voltage - Rated
15V
Current Rating
1.3A
Current - Test
55mA
Voltage - Test
12V
Power - Output
3W
Package / Case
PLD-1.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
MRFG35003NR5TR
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
MRFG35003NT1 replaced by MRFG35003ANT1.
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Drain - Source Voltage
Total Device Dissipation @ T
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Operating Case Temperature Range
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
@ 0.01% Probability)
I
Derate above 25°C
DQ
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
(1)
Test Methodology
C
= 25°C
Characteristic
Rating
Class AB
Rating
1
Symbol
Symbol
V
R
V
T
P
P
T
T
DSS
Package Peak Temperature
θJC
GS
stg
ch
D
in
C
Document Number: MRFG35003N
MRFG35003NT1
CASE 466 - 03, STYLE 1
260
3.5 GHz, 3 W, 12 V
- 65 to +150
- 20 to +85
GaAs PHEMT
POWER FET
0.05
18.5
Value
8.1
Value
175
15
29
PLASTIC
- 5
PLD - 1.5
(2)
(2)
(2)
MRFG35003NT1
Rev. 5, 1/2008
W/°C
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
°C
W
1

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MRFG35003NR5 Summary of contents

Page 1

... Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35003N Symbol ...

Page 2

... D ACPR = 55 mA, Min Typ Max — 1.3 — — < 1.0 100 μAdc — — 450 μAdc — < 1.0 7 mAdc - 1.2 - 0.9 - 0.7 - 1.2 - 0.9 - 0.7 10 11.5 — — 3 — — — Device Data Freescale Semiconductor Unit Adc Vdc Vdc dBc ...

Page 3

... Chip Capacitor (0805) C22, C27 0.2 pF Chip Capacitors (0805) C23, C28 0.8 pF Chip Capacitors (0805) C24 1.0 pF Chip Capacitor C25 1.2 pF Chip Capacitor C26 0.5 pF Chip Capacitor R1 100 W Chip Resistor RF Device Data Freescale Semiconductor C22 Z10 Z11 C27 Z11 Z12 ...

Page 4

... C21 C1 C28 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout ...

Page 5

... NOTE: All data is referenced to package lead interface. Γ All data is generated from load pull, not from the test circuit shown. RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IRL Vdc 3.55 GHz, 8.5 P/A 3GPP W−CDMA Γ = 0.813é−106.27_, Γ = 0.734é−142.65_ ...

Page 6

... RF Device Data Freescale Semiconductor ...

Page 7

... RF Device Data Freescale Semiconductor = 12 Vdc (continued ∠ φ 1.845 7.80 0.043 1.828 6.20 0.043 1.812 4.39 0.043 1 ...

Page 8

... U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 RF Device Data Freescale Semiconductor inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 0.31 ...

Page 9

... The following table summarizes revisions to this document. Revision Date 5 Jan. 2008 • Listed replacement part • Added Revision History Device Data Freescale Semiconductor REVISION HISTORY Description MRFG35003NT1 9 ...

Page 10

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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