MRFG35002N6R5 Freescale Semiconductor, MRFG35002N6R5 Datasheet

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MRFG35002N6R5

Manufacturer Part Number
MRFG35002N6R5
Description
TRANSISTOR RF 1.5W 6V POWER FET
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35002N6R5

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
8V
Current Rating
1.7A
Current - Test
65mA
Voltage - Test
6V
Power - Output
1.5W
Package / Case
PLD-1.5
Configuration
Single Dual Source
Gate-source Voltage (max)
5V
Drain-source Volt (max)
8V
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
MRFG35002N6R5TR
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 1.5 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
MRFG35002N6T1 replaced by MRFG35002N6AT1.
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Operating Case Temperature Range
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
65 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Select Documentation/Application Notes - AN1955.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
out
= 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
(1)
Test Methodology
Characteristic
Rating
DD
= 6 Volts, I
DQ
Rating
=
1
Symbol
Symbol
V
R
V
T
P
T
T
DSS
Package Peak Temperature
θJC
GS
stg
ch
in
C
Document Number: MRFG35002N6
MRFG35002N6T1
CASE 466 - 03, STYLE 1
260
3.5 GHz, 1.5 W, 6 V
- 65 to +150
- 20 to +85
GaAs PHEMT
Value
POWER FET
Value
15.2
175
22
PLASTIC
- 5
PLD - 1.5
8
(2)
MRFG35002N6T1
Rev. 2, 1/2008
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
°C
1

Related parts for MRFG35002N6R5

MRFG35002N6R5 Summary of contents

Page 1

... For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35002N6 ...

Page 2

... Avg 3550 MHz, out 8.5 10 — — — mA 3550 MHz — 1.5 — RF Device Data Freescale Semiconductor Unit Adc μAdc μAdc mAdc Vdc Vdc dB % dBc W ...

Page 3

... Chip Capacitors C9, C18 100 pF Chip Capacitors C10, C17 1000 pF Chip Capacitors C11, C16 0.1 μF Chip Capacitors C12, C15 39K pF Chip Capacitors C13, C14 10 μF Chip Capacitors C23 0.2 pF Chip Capacitor R1 100 Ω, 1/4 W Chip Resistor RF Device Data Freescale Semiconductor C8 C18 C22 ...

Page 4

... C13 C12 C12 C11 C10 Figure 2. MRFG35002N6 Test Circuit Component Layout MRFG35002N6T1 4 C18 C22 C23 C14 C17 C16 C15 C19 C20 C21 C24 MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz RF Device Data Freescale Semiconductor ...

Page 5

... NOTE: All data is referenced to package lead interface. Γ All data is generated from load pull, not from the test circuit shown. RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc mA 3550 MHz DS DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Γ ...

Page 6

... TYPICAL CHARACTERISTICS = 6 Vdc mA 3550 MHz η OUTPUT POWER (dBm) out and Drain Efficiency versus Output Power = 6 Vdc mA 3550 MHz DS DQ IRL ACPR OUTPUT POWER (dBm) out Input Return Loss versus Output Power −5 −10 −15 −20 − Device Data Freescale Semiconductor ...

Page 7

... RF Device Data Freescale Semiconductor = 6 Vdc ∠ φ 6.43 84.54 0.0316 5.86 82.68 0.0319 5.38 80.94 0.0320 4.98 79 ...

Page 8

... RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor = 6 Vdc (continued ∠ φ 1.31 - 70.79 0.0583 1.31 - 73.33 0.0592 1.31 - 75.85 0.0596 1 ...

Page 10

... U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 RF Device Data Freescale Semiconductor inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 0.31 ...

Page 11

... Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers The following table summarizes revisions to this document. Revision Date 2 Jan. 2008 • Listed replacement part • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35002N6T1 11 ...

Page 12

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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