MRF6S9060NR1 Freescale Semiconductor, MRF6S9060NR1 Datasheet

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MRF6S9060NR1

Manufacturer Part Number
MRF6S9060NR1
Description
MOSFET RF N-CH 28V 14W TO-270-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S9060NR1

Transistor Type
N-Channel
Frequency
880MHz
Gain
21.4dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
28V
Power - Output
14W
Package / Case
TO-270-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S9060NR1
Manufacturer:
FREESCALE
Quantity:
105
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
out
Power Gain — 20 dB
Drain Efficiency — 63%
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
MTTF calculators by product.
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 450 mA, P
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 500 mA, P
DQ
= 500 mA,
out
DD
= 60 Watts,
= 28 Volts,
Symbol
V
V
T
T
DSS
T
GS
stg
C
BROADBAND RF POWER MOSFETs
J
Document Number: MRF6S9060N
MRF6S9060NBR1
MRF6S9060NR1 MRF6S9060NBR1
MRF6S9060NR1
880 MHz, 14 W AVG., 28 V
LATERAL N - CHANNEL
CASE 1265 - 09, STYLE 1
CASE 1337 - 04, STYLE 1
SINGLE N - CDMA
MRF6S9060NBR1
MRF6S9060NR1
- 65 to +150
- 0.5, +68
- 0.5, + 12
Value
TO - 270- 2
TO - 272- 2
PLASTIC
PLASTIC
150
225
Rev. 4, 8/2008
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S9060NR1

MRF6S9060NR1 Summary of contents

Page 1

... Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment ...

Page 2

... Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9060NR1 MRF6S9060NBR1 2 Rating 3 = 25°C unless otherwise noted) Symbol ...

Page 3

... C Symbol G ps η D EVM SR1 SR2 G ps η D IRL P1dB Min Typ Max Unit — 20 — dB — 46 — % — 1.5 — % — — dBc — — dBc = 28 Vdc, DD — 20 — dB — 63 — % — — dB — 67 — W MRF6S9060NR1 MRF6S9060NBR1 3 ...

Page 4

... Z6 0.280″ x 0.270″ x 0.530″ Taper Z7 0.087″ x 0.525″ Microstrip Z8 0.435″ x 0.525″ Microstrip Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead B2 Ferrite Bead C1, C8, C14, C15 47 pF Chip Capacitors C2, C4, C13 0 ...

Page 5

... Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 B2 C8 C15 C11 C10 C16 C17 R4 C18 C12 C14 C13 TO−270/272 Surface / Bolt down MRF6S9060NR1 MRF6S9060NBR1 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9060NR1 MRF6S9060NBR1 6 TYPICAL CHARACTERISTICS = 28 Vdc (Avg.), I = 450 mA DD out IRL 850 860 870 880 890 900 f, FREQUENCY (MHz Vdc (Avg ...

Page 7

... Gain and Drain Efficiency versus Output Power = 28 Vdc (PEP) out = 450 mA, Two−Tone Measurements 1 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −25 η D −35 ALT1 85_C −45 −30_C ACPR −55 −65 25_C −75 −85 MRF6S9060NR1 MRF6S9060NBR1 100 300 7 ...

Page 8

... This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 8 TYPICAL CHARACTERISTICS −30_C T = −30_C 25_C 85_C η ...

Page 9

... FREQUENCY (MHz) MRF6S9060NR1 MRF6S9060NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

Page 10

... 910 MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9060NR1 MRF6S9060NBR1 Ω 910 MHz Z load f = 850 MHz Vdc 450 mA Avg out source load MHz Ω Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S9060NR1 MRF6S9060NBR1 11 ...

Page 12

... MRF6S9060NR1 MRF6S9060NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 13 ...

Page 14

... MRF6S9060NR1 MRF6S9060NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 15 ...

Page 16

... MRF6S9060NR1 MRF6S9060NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... MTTF calculator for device • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for test condition to indicate AC stimulus on the V iss , and added “Measured in GS(Q) connection versus the V connection and listed MRF6S9060NR1 MRF6S9060NBR1 17 ...

Page 18

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S9060NR1 MRF6S9060NBR1 Document Number: MRF6S9060N Document Number: MRF6S9060N Rev. 4, 8/2008 Rev ...

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