MRF6S9125MR1 Freescale Semiconductor, MRF6S9125MR1 Datasheet

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MRF6S9125MR1

Manufacturer Part Number
MRF6S9125MR1
Description
MOSFET RF N-CH 28V 27W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S9125MR1

Transistor Type
N-Channel
Frequency
880MHz
Gain
20.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
950mA
Voltage - Test
28V
Power - Output
27W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
950 mA, P
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
P
921 - 960 MHz)
125 Watts, Full Frequency Band (921 - 960 MHz)
@ f = 880 MHz
Derate above 25°C
out
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 19 dB
Drain Efficiency — 62%
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 60 Watts Avg., Full Frequency Band (865 - 895 MHz or
out
= 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95
C
= 25°C
DD
= 28 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
DQ
= 700 mA, P
DD
DQ
= 28 Volts, I
= 700 mA,
out
=
DQ
=
Symbol
V
V
T
P
DSS
T
stg
GS
D
J
CASE 1486 - 03, STYLE 1
CASE 1484 - 03, STYLE 1
Document Number: MRF6S9125
MRF6S9125MBR1
MRF6S9125MR1 MRF6S9125MBR1
MRF6S9125MR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
TO - 270 WB - 4
LATERAL N - CHANNEL
TO - 272 WB - 4
RF POWER MOSFETs
PLASTIC
PLASTIC
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, +12
Value
398
200
2.3
Rev. 2, 2/2006
W/°C
Unit
Vdc
Vdc
°C
°C
W
1

Related parts for MRF6S9125MR1

MRF6S9125MR1 Summary of contents

Page 1

... MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S9125MR1 CASE 1484 - 03, STYLE 272 PLASTIC MRF6S9125MBR1 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc GS P 398 W D 2.3 W/° +150 °C stg T 200 °C J MRF6S9125MR1 MRF6S9125MBR1 1 ...

Page 2

... Functional Tests (In Freescale Test Fixture, 50 ohm system) V Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Part is internally input matched. MRF6S9125MR1 MRF6S9125MBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... SR1 SR2 = 28 Vdc η D IRL P1dB Min Typ Max Unit = 28 Vdc 950 mA — 20 — dB — 40 — % — 1.5 — % rms — — dBc — — dBc = 700 mA 125 W, DQ out — 19 — dB — 62 — % — — dB — 125 — W MRF6S9125MR1 MRF6S9125MBR1 3 ...

Page 4

... Microstrip Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip Figure 1. MRF6S9125MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9125MR1(MBR1) Test Circuit Component Designations and Values Part Chip Capacitor C2 6.2 pF Chip Capacitor C3, C15 0.8- 8.0 pF Variable Capacitors, Gigatrim ...

Page 5

... C10 C1 Figure 2. MRF6S9125MR1(MBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C7 C20 C21 C6 C19 R2 C18 R1 C4 C11 C14 L2 L1 C13 C2 C12 C5 C3 C22 V DD C23 C17 C16 C15 900 MHz TO272 WB Rev. 0 MRF6S9125MR1 MRF6S9125MBR1 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements, 100 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9125MR1 MRF6S9125MBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 Pilot DQ Sync, Paging, Traffic Codes 8 Through 13 ...

Page 7

... OUTPUT POWER (WATTS) AVG. out Gain and Drain Efficiency versus Output Power = 28 Vdc 125 W (PEP) out 1 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual 35 36 −30 25_C −40 ALT1 85_C −50 25_C 85_C −60 ACPR −70 −80 100 200 MRF6S9125MR1 MRF6S9125MBR1 100 7 ...

Page 8

... T = −30_C 25_C 19 85_C η 25_C 16 85_C OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 13. MTTF Factor versus Junction Temperature MRF6S9125MR1 MRF6S9125MBR1 8 TYPICAL CHARACTERISTICS 21 70 −30_C Vdc 950 880 MHz 100 200 Figure 12. Power Gain versus Output Power ...

Page 9

... N - CDMA TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 − −100 −110 −3.6 −2.9 Figure 15. Single - Carrier N - CDMA Spectrum 1.2288 MHz Channel BW −ACPR @ 30 kHz +ACPR @ 30 kHz Integrated BW Integrated BW −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) MRF6S9125MR1 MRF6S9125MBR1 3.6 9 ...

Page 10

... MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9125MR1 MRF6S9125MBR1 900 MHz Z load f = 860 MHz = 5 Ω source f = 860 MHz Vdc 950 mA Avg out source load MHz Ω Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF6S9125MR1 MRF6S9125MBR1 11 ...

Page 12

... MRF6S9125MR1 MRF6S9125MBR1 12 PACKAGE DIMENSIONS DRAIN LEAD ...

Page 13

... RF Device Data Freescale Semiconductor MRF6S9125MR1 MRF6S9125MBR1 13 ...

Page 14

... MRF6S9125MR1 MRF6S9125MBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S9125MR1 MRF6S9125MBR1 15 ...

Page 16

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S9125MR1 MRF6S9125MBR1 Document Number: MRF6S9125 Rev. 2, 2/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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