MRF9180R6 Freescale Semiconductor, MRF9180R6 Datasheet

MRF9180R6
Manufacturer Part Number	MRF9180R6
Description	IC MOSFET RF N-CHAN NI-1230
Manufacturer	Freescale Semiconductor
MRF9180R6 datasheets	1. MRF9180R6.pdf (11 pages)

Request lead time and price

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of MRF9180R6
Transistor Type	N-Channel	Frequency	880MHz
Gain	17.5dB	Voltage - Rated	65V
Current Rating	10µA	Current - Test	1.4A
Voltage - Test	26V	Power - Output	170W
Package / Case	NI-1230	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Noise Figure	-

Page 1/11

Download datasheet (310Kb)Embed

Prev Next

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of this device make it ideal for large- signal, common- source amplifier

applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, I

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 40 Watts

Power Gain — 17 dB

Efficiency — 26%

Adjacent Channel Power -

750 kHz:

-45.0 dBc in 30 kHz BW

1.98 MHz:

-60.0 dBc in 30 kHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Drain-Source Voltage

Gate-Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

RF Device Data

Freescale Semiconductor

Document Number: MRF9180

= 1400 mA

LATERAL N-CHANNEL

Symbol

DSS

stg

Symbol

θJC

Rev. 10, 5/2006

MRF9180R6

880 MHz, 170 W, 26 V

RF POWER MOSFET

CASE 375D-05, STYLE 1

NI-1230

Value

Unit

-0.5, +65

Vdc

-0.5, +15

Vdc

388

2.22

W/°C

°C

-65 to +150

°C

150

°C

200

Value

Unit

°C/W

0.45

Class

1 (Minimum)

M1 (Minimum)

MRF9180R6

Download datasheet (310Kb)

Related parts for MRF9180R6
Part Number	Description	Manufacturer	Datasheet
MRF9180		Freescale Semiconductor	MRF9180.pdf (11 pages)
MRF9180R5	IC MOSFET RF N-CHAN NI-1230	Freescale Semiconductor
MRF9130L		Freescale Semiconductor, Inc	MRF9130L.pdf (12 pages)
MRF9100		Freescale Semiconductor, Inc	MRF9100.pdf (12 pages)
MRF9135L		Freescale Semiconductor, Inc	MRF9135L.pdf (12 pages)
MRF9120		Freescale Semiconductor	MRF9120.pdf (12 pages)
MRF9130LSR5	MRF9130L Series 921 - 960 MHz 130 W 28 V GSM/GSM EDGE N-Ch RF Power MOSFET	Freescale Semiconductor	MRF9130LSR5.pdf (12 pages)
MRF9135LSR3	IC MOSFET RF N-CHAN NI-780S	Freescale Semiconductor	MRF9135LSR3.pdf (12 pages)
MRF9135LR5	IC MOSFET RF N-CHAN NI-780	Freescale Semiconductor
MRF9135LSR5	IC MOSFET RF N-CHAN NI-780S	Freescale Semiconductor
MRF9120LR5	IC MOSFET RF N-CHAN NI-860	Freescale Semiconductor
MRF9135LR3	IC MOSFET RF N-CHAN NI-780	Freescale Semiconductor	MRF9135LSR3.pdf (12 pages)
MRF9120LR3	IC MOSFET RF N-CHAN NI-860	Freescale Semiconductor	MRF9120LR3.pdf (12 pages)
mrf9100l	Rf Power Field Effect Transistors	Freescale Semiconductor, Inc	MRF9100L.pdf (12 pages)
MRF9120S	880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola / Freescale Semiconductor	MRF9120S.pdf (12 pages)

MRF9180R6 Summary of contents
Page 1 ... Symbol V DSS stg Symbol R θJC Rev. 10, 5/2006 MRF9180R6 880 MHz, 170 POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 Value Unit -0.5, +65 Vdc -0.5, +15 Vdc 388 W 2.22 W/°C °C -65 to +150 °C 150 °C 200 Value Unit °C/W 0.45 Class 1 (Minimum) M1 (Minimum) MRF9180R6 1 ... Page 2 ... MHz 865.1 MHz) Input Return Loss ( Vdc 170 W PEP 1400 mA, DD out 865.0 MHz 865.1 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. 3. Part internally input matched. MRF9180R6 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) ... Page 3 ... Drain Efficiency ( Vdc 170 W CW out 880.0 MHz) 1. Measurement made with device in push-pull configuration. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol P 1dB 1400 mA, η = 1400 mA, Min Typ Max Unit — 170 — W — 16.5 — dB — 55 — % MRF9180R6 3 ... Page 4 ... Coax1, Coax2 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05″ Long Coax3, Coax4 L1, L2, L3 18.5 nH Mini Spring Inductors, Coilcraft L4 12.5 nH Mini Spring Inductor, Coilcraft 510 Ω, 1/10 W Chip Resistors R1, R2 Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180R6 C14 C16 C13 Z18 R1 ... Page 5 ... Figure 2. 880 MHz Broadband Test Circuit Component Layout RF Device Data Freescale Semiconductor MRF9180 B2 B4 900MHz PUSH PULL Rev 01 C14 C10 C16 R1 C17 C15 C12 B1 B3 C26 C27 C28 C22 L3 L4 C20 C18 C29 C19 L2 C21 C25 C23 C24 MRF9180R6 5 ... Page 6 ... DQ - 880 MHz f2 = 880.1 MHz -30 -40 -50 3rd Order -60 5th Order 7th Order - OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF9180R6 6 TYPICAL CHARACTERISTICS Vdc 170 W (PEP) out I = 1400 mA DQ IMD IRL Two-Tone Measurement 100 kHz Tone Spacing 865 ... Page 7 ... OUTPUT POWER (WATTS) PEP out Output Power Vdc 1400 880 MHz IS‐95, Pilot, Sync, Paging Traffic Codes 8 through 13 750 MHz 1.98 MHz OUTPUT POWER (WATTS) AVG. out Figure 9. Power Gain, Efficiency and ACPR versus Output Power -20 -40 - -20 -40 -60 -80 100 MRF9180R6 7 ... Page 8 ... Z Z Input Matching Network Figure 10. Series Equivalent Source and Load Impedance MRF9180R6 865 MHz f = 865 MHz Z source f = 895 MHz f = 895 MHz = 5 Ω 1400 mA 170 W PEP DD DQ out source load Ω Ω MHz 865 2.95 - j0.00 3.83 - j1.02 880 2.48 - j0.67 3.55 - j1.38 895 2 ... Page 9 ... N 1.218 1.242 30.94 31. 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE 1: PIN 1. DRAIN M 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF9180R6 9 ... Page 10 ... The following table summarizes revisions to this document. Revision Date • Data sheet archived. Part no longer manufactured. 10 Dec. 2009 MRF9180R6 10 REVISION HISTORY Description RF Device Data Freescale Semiconductor ... Page 11 ... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008-2009. All rights reserved. MRF9180R6 11 ...

MRF9180R6 Summary of contents

Page 1
... Symbol V DSS stg Symbol R θJC Rev. 10, 5/2006 MRF9180R6 880 MHz, 170 POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 Value Unit -0.5, +65 Vdc -0.5, +15 Vdc 388 W 2.22 W/°C °C -65 to +150 °C 150 °C 200 Value Unit °C/W 0.45 Class 1 (Minimum) M1 (Minimum) MRF9180R6 1 ...
Page 2
... MHz 865.1 MHz) Input Return Loss ( Vdc 170 W PEP 1400 mA, DD out 865.0 MHz 865.1 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. 3. Part internally input matched. MRF9180R6 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) ...
Page 3
... Drain Efficiency ( Vdc 170 W CW out 880.0 MHz) 1. Measurement made with device in push-pull configuration. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol P 1dB 1400 mA, η = 1400 mA, Min Typ Max Unit — 170 — W — 16.5 — dB — 55 — % MRF9180R6 3 ...
Page 4
... Coax1, Coax2 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05″ Long Coax3, Coax4 L1, L2, L3 18.5 nH Mini Spring Inductors, Coilcraft L4 12.5 nH Mini Spring Inductor, Coilcraft 510 Ω, 1/10 W Chip Resistors R1, R2 Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180R6 C14 C16 C13 Z18 R1 ...
Page 5
... Figure 2. 880 MHz Broadband Test Circuit Component Layout RF Device Data Freescale Semiconductor MRF9180 B2 B4 900MHz PUSH PULL Rev 01 C14 C10 C16 R1 C17 C15 C12 B1 B3 C26 C27 C28 C22 L3 L4 C20 C18 C29 C19 L2 C21 C25 C23 C24 MRF9180R6 5 ...
Page 6
... DQ - 880 MHz f2 = 880.1 MHz -30 -40 -50 3rd Order -60 5th Order 7th Order - OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF9180R6 6 TYPICAL CHARACTERISTICS Vdc 170 W (PEP) out I = 1400 mA DQ IMD IRL Two-Tone Measurement 100 kHz Tone Spacing 865 ...
Page 7
... OUTPUT POWER (WATTS) PEP out Output Power Vdc 1400 880 MHz IS‐95, Pilot, Sync, Paging Traffic Codes 8 through 13 750 MHz 1.98 MHz OUTPUT POWER (WATTS) AVG. out Figure 9. Power Gain, Efficiency and ACPR versus Output Power -20 -40 - -20 -40 -60 -80 100 MRF9180R6 7 ...
Page 8
... Z Z Input Matching Network Figure 10. Series Equivalent Source and Load Impedance MRF9180R6 865 MHz f = 865 MHz Z source f = 895 MHz f = 895 MHz = 5 Ω 1400 mA 170 W PEP DD DQ out source load Ω Ω MHz 865 2.95 - j0.00 3.83 - j1.02 880 2.48 - j0.67 3.55 - j1.38 895 2 ...
Page 9
... N 1.218 1.242 30.94 31. 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE 1: PIN 1. DRAIN M 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF9180R6 9 ...
Page 10
... The following table summarizes revisions to this document. Revision Date • Data sheet archived. Part no longer manufactured. 10 Dec. 2009 MRF9180R6 10 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
Page 11
... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008-2009. All rights reserved. MRF9180R6 11 ...

MRF9180R6

MRF9180R6

Shipping terms

Payment terms

Specifications of MRF9180R6

Related parts for MRF9180R6

MRF9180R6 Summary of contents

Related keywords: