MRFG35010

Manufacturer Part NumberMRFG35010
DescriptionTRANSISTOR RF FET 3.5GHZ NI360HF
ManufacturerFreescale Semiconductor
MRFG35010 datasheet
 


Specifications of MRFG35010

Transistor TypepHEMT FETFrequency3.55GHz
Gain10dBVoltage - Rated15V
Current Rating2.9ACurrent - Test180mA
Voltage - Test12VPower - Output10W
Package / CaseNI-360HFLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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Freescale Semiconductor
Technical Data
MRFG35010R1 replaced by MRFG35010AR1.
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
DQ
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3550 MHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
(1)
Channel Temperature
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
1. For reliable operation, the operating channel temperature should not exceed 150°C.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRFG35010
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Symbol
Class A
R
θJC
Class AB
Rev. 9, 1/2008
MRFG35010R1
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D - 02, STYLE 1
NI - 360HF
Value
Unit
15
Vdc
28.3
W
0.19
W/°C
- 5
Vdc
33
dBm
- 65 to +175
°C
175
°C
- 20 to +90
°C
Value
Unit
5.3
°C/W
4.8
MRFG35010R1
1

MRFG35010 Summary of contents

  • Page 1

    ... Freescale Semiconductor Technical Data MRFG35010R1 replaced by MRFG35010AR1. Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W - CDMA Performance dBc ACPR, 3.55 GHz, 12 Volts 180 mA, 5 MHz Offset/3 ...

  • Page 2

    ... Drain Efficiency ( Vdc 180 mA Avg out f = 3.55 GHz) Adjacent Channel Power Ratio ( Vdc Avg 180 mA, DD out 3.55 GHz CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) MRFG35010R1 2 = 25°C unless otherwise noted) C Symbol I DSS I GSS I DSO I DSX V GS(th) V GS( P1dB ...

  • Page 3

    ... Microstrip 0.290″ x 90° Microstrip Radial Stub 0.184″ x 0.390″ Microstrip 0.040″ x 0.580″ Microstrip 0.109″ x 0.099″ Microstrip 0.030″ x 0.225″ Microstrip 0.080″ x 0.240″ Microstrip 0.044″ x 0.143″ Microstrip MRFG35010R1 RF 3 ...

  • Page 4

    ... PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout MRFG35010R1 4 R7 C11 R3 R4 C12 D1 U1 C10 C17 C13 C18 GND C16 C15 C14 C19 C20 C21 OUTPUT MRFG35010 Rev−06 RF Device Data Freescale Semiconductor ...

  • Page 5

    ... GHz, 8.5 dB P/A 3GPP W−CDMA Γ = 0.857é−144.24_, Γ = 0.798é−164.30_ out η INPUT POWER (dBm) in Figure CDMA Output Power and Drain Efficiency versus Input Power and Γ are the impedances presented to the DUT −10 −20 −30 −40 −50 −60 − MRFG35010R1 5 ...

  • Page 6

    ... Z load Z Z Figure 6. Series Equivalent Source and Load Impedance MRFG35010R1 3600 MHz f = 3500 MHz = 25 Ω source f = 3600 MHz f = 3500 MHz =180 mA out source load MHz Ω Ω 3500 4.3 - j16.3 5.7 - j7.0 3550 4.2 - j16.0 5.7 - j6.8 3600 4.1 - j15.8 5.7 - j6.6 ...

  • Page 7

    ... MRFG35010R1 7 ...

  • Page 8

    ... MRFG35010R1 Vdc 180 ∠ φ 5.292 80.70 0.014 4.422 77.20 0.014 3.803 74.02 0.015 3.341 70 ...

  • Page 9

    ... K .085 .115 2.16 2.92 M .355 .365 9.02 9. .355 .365 9.96 10.16 Q .125 .135 3.18 3.43 R .225 .235 5.72 5.97 S .225 .235 5.72 5.97 aaa .005 0.13 bbb .010 0.25 ccc .015 0.38 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE MRFG35010R1 9 ...

  • Page 10

    ... The following table summarizes revisions to this document. Revision Date 9 Jan. 2008 • Listed replacement part • Added Revision History MRFG35010R1 10 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

  • Page 11

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRFG35010 Rev. 9, 1/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...