MRF372R5 Freescale Semiconductor, MRF372R5 Datasheet

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MRF372R5

Manufacturer Part Number
MRF372R5
Description
IC MOSFET RF N-CHAN NI-860C3
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF372R5

Transistor Type
N-Channel
Frequency
857MHz
Gain
17dB
Voltage - Rated
68V
Current Rating
17A
Current - Test
800mA
Voltage - Test
32V
Power - Output
180W
Package / Case
NI-860C3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two - Tone Performance @ f1 = 857 MHz,
• Typical Broadband Two - Tone Performance @ f1 = 857 MHz,
• Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Features
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
f2 = 863 MHz, 32 Volts
f2 = 863 MHz, 32 Volts
Power
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Derate above 25°C
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — - 35 dBc
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — - 31 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
I
θJC
GS
stg
D
D
C
J
470 - 860 MHz, 180 W, 32 V
LATERAL N - CHANNEL
CASE 375G - 04, STYLE 1
Document Number: MRF372
RF POWER MOSFET
M3 (Minimum)
1 (Minimum)
MRF372R3
MRF372R5
- 65 to +150
- 0.5, +68
- 0.5, +15
Value
Value
Class
350
150
200
2.0
0.5
NI - 860C3
17
MRF372R3 MRF372R5
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

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MRF372R5 Summary of contents

Page 1

... MHz, 180 LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 860C3 Symbol Value Unit V - 0.5, +68 DSS V - 0.5, + 350 D 2.0 W/° +150 stg T 150 C T 200 J Symbol Value Unit R 0.5 °C/W θJC Class 1 (Minimum) M3 (Minimum) MRF372R3 MRF372R5 Vdc Vdc Adc W °C °C °C 1 ...

Page 2

... W PEP out 857 MHz 863 MHz) Intermodulation Distortion ( Vdc 180 W PEP out 857 MHz 863 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. MRF372R3 MRF372R5 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) V GS(Q) ...

Page 3

... RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS C iss C oss C rss DRAIN−SOURCE VOLTAGE (VOLTS) DS Note: C does not include input matching capacitance. iss Figure 1. Capacitance versus Voltage MRF372R3 MRF372R5 3 ...

Page 4

... Balun A, B Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á MRF372R3 MRF372R5 4 GATE L1 ...

Page 5

... C7B L2B C12B C5B C8B C10B MRF372 Rev 1a Vertical Balun Mounting Detail Ground C15 C14A C13 C14B Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Input (50 ohm microstrip) 55 mil slot cut out to accept Balun MRF372R3 MRF372R5 5 ...

Page 6

... I = 400 mA −25 DQ −30 800 mA −35 1.2 A −40 −45 1.6 A − OUTPUT POWER (WATTS) PEP out Figure 7. Intermodulation Distortion versus Output Power MRF372R3 MRF372R5 Vdc 1600 Mode 64 QAM 10 dB Peak/Avg. Ratio IMR OUTPUT POWER (WATTS) AVG. out Note: IMR measured using Delta Marker Method. ...

Page 7

... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device + Under − Test − source load load Ω load Ω Output Matching Network MRF372R3 MRF372R5 7 ...

Page 8

... Balun A, B Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á MRF372R3 MRF372R5 8 GATE DRAIN ...

Page 9

... Rev. 1a Vertical Balun Mounting Detail Ground C16A C15A R10A C14A C14B C13 C14C C14D R10B C15B C16B Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Input (50 ohm microstrip) 55 mil slot cut out to accept Balun MRF372R3 MRF372R5 9 ...

Page 10

... MHz 860 MHz OUTPUT POWER (WATTS) PEP out Figure 12. Power Gain versus Output Power Figure 14. Drain Efficiency versus Output Power MRF372R3 MRF372R5 10 − Vdc DD − 1000 − MHz −20 −25 −30 −35 −40 −45 −50 100 Figure 13. Intermodulation Distortion versus ...

Page 11

... Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under − Matching Test Network − source load = 10 Ω 860 MHz Z load f = 470 MHz load Ω Output Matching Network MRF372R3 MRF372R5 11 ...

Page 12

... MRF372R3 MRF372R5 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF372R3 MRF372R5 13 ...

Page 14

... MRF372R3 MRF372R5 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... N 0.851 0.869 21.62 22.07 Q 0.118 0.138 3.00 3.30 R 0.395 0.405 10.03 10.29 S 0.394 0.406 10.01 10.31 bbb 0.010 REF 0.25 REF SEATING ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF372R3 MRF372R5 15 ...

Page 16

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF372R3 MRF372R5 Document Number: MRF372 Rev. 9, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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