MRF7S21170HS Freescale Semiconductor, MRF7S21170HS Datasheet
MRF7S21170HS
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MRF7S21170HS Summary of contents
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... DQ CASE 465B- -03, STYLE 1 MRF7S21170HR3 CASE 465C- -02, STYLE 1 MRF7S21170HSR3 Symbol V DSS stg Symbol R θJC MRF7S21170HR3 MRF7S21170HSR3 Rev. 6, 3/2011 MRF7S21170HR3 SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs NI- -880 NI- -880S Value Unit --0.5, +65 Vdc --6.0, +10 Vdc 32, +0 Vdc -- 65 to +150 °C 150 °C 225 °C ...
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... Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S21170HR3 MRF7S21170HSR3 2 = 25°C unless otherwise noted) A Symbol I DSS I DSS I ...
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... W CW ∆Φ out ∆G ∆P1dB Min Typ Max = 1400 mA, 2110--2170 MHz Bandwidth — 25 — — 0.4 — — 1.95 — — 1.7 — — 18 — — 0.015 — — 0.01 — MRF7S21170HR3 MRF7S21170HSR3 Unit MHz dB ° ns ° dB/°C dB/°C 3 ...
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... C6 0.2 pF Chip Capacitor C9, C10, C11, C12 10 μF Chip Capacitors C13 470 μ Electrolytic Capacitor, Radial C14 0.4 pF Chip Capacitor C16 0.1 pF Chip Capacitor R1 kΩ, 1/4 W Chip Resistors R3 10 Ω, 1/4 W Chip Resistor MRF7S21170HR3 MRF7S21170HSR3 4 Z17 Z10 Z11 Z12 DUT C6 Z18 ...
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... Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...
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... Vdc 2135 MHz 2145 MHz DD Two--Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two- -Tone Power Gain versus Output Power MRF7S21170HR3 MRF7S21170HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1400 mA DD out DQ Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 ...
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... DQ IM3--L IM3--U IM5--U IM7--U IM7--L 10 TWO--TONE SPACING (MHz) versus Tone Spacing 54 Ideal Actual 24 18 100 120 --30_C T = --30_C C 85_C 25_C 85_C Vdc 1400 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21170HR3 MRF7S21170HSR3 100 60 25_C 400 7 ...
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... W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF7S21170HR3 MRF7S21170HSR3 8 TYPICAL CHARACTERISTICS 2140 MHz 100 200 P , OUTPUT POWER (WATTS) CW out Figure 12 ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Network Test Z Z source load Z source f = 2060 MHz Output Matching Network MRF7S21170HR3 MRF7S21170HSR3 9 ...
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... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω P3dB 4.43 -- j11.85 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V MRF7S21170HR3 MRF7S21170HSR3 10 62 Ideal P3dB = 54.65 dBm (290 P1dB = 53.54 dBm (226 W) ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S21170HR3 MRF7S21170HSR3 11 ...
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... MRF7S21170HR3 MRF7S21170HSR3 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF7S21170HR3 MRF7S21170HSR3 13 ...
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... MRF7S21170HR3 MRF7S21170HSR3 14 RF Device Data Freescale Semiconductor ...
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... MTTF calculator for device • Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated to include output power level at functional test Device Data Freescale Semiconductor REVISION HISTORY Description to On Characteristics table GG(Q) MRF7S21170HR3 MRF7S21170HSR3 , GS(Q) 2 and listed (continued) 15 ...
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... Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal (renumbered as Figs. 13 and 14 respectively after Fig. 13 removed) • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF7S21170HR3 MRF7S21170HSR3 16 REVISION HISTORY (continued) Description value for V from 270 μ ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006--2008, 2011. All rights reserved. MRF7S21170HR3 MRF7S21170HSR3 17 ...