MRFE6S9135HSR5

Manufacturer Part NumberMRFE6S9135HSR5
DescriptionMOSFET RF N-CH 39W 28V NI-880S
ManufacturerFreescale Semiconductor
MRFE6S9135HSR5 datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of MRFE6S9135HSR5

Transistor TypeN-ChannelFrequency940MHz
Gain21dBVoltage - Rated66V
Current Rating10µACurrent - Test1A
Voltage - Test28VPower - Output39W
Package / CaseNI-880SLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
Page 1/12

Download datasheet (443Kb)Embed
Next
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single- Carrier W - CDMA Performance: V
1000 mA, P
= 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, P
(3 dB Input Overdrive from Rated P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
=
DD
DQ
= 180 W CW
out
), Designed for Enhanced Ruggedness
out
Operation
DD
Document Number: MRFE6S9135H
Rev. 1, 11/2007
MRFE6S9135HR3
MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9135HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9135HSR3
Symbol
Value
Unit
V
- 0.5, +66
Vdc
DSS
V
- 0.5, +12
Vdc
GS
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
0.39
0.48
MRFE6S9135HR3 MRFE6S9135HSR3
1

Related parts for MRFE6S9135HSR5

Part Number DescriptionManufacturer Datasheet
  MRFE6S9135HS Freescale Semiconductor, Inc
  MRFE6S9130HR3 MOSFET RF N-CH 27W NI-780 Freescale Semiconductor
  MRFE6S9130HSR3 MOSFET RF N-CH 27W NI-780S Freescale Semiconductor
  MRFE6S9135HR3 MOSFET RF N-CH 39W 28V NI-880 Freescale Semiconductor
  MRFE6S9135HSR3 MOSFET RF N-CH 39W 28V NI-880S Freescale Semiconductor
  MRFE6S9130HR5 MOSFET RF N-CH 27W NI-780 Freescale Semiconductor
  MRFE6S9130HSR5 MOSFET RF N-CH 27W NI-780S Freescale Semiconductor
  MRFE6S9135HR5 MOSFET RF N-CH 39W 28V NI-880 Freescale Semiconductor
  MRFE6S9130HR3_08 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs FREESCALE [Freescale Semiconductor, Inc]
  mrfe6s9135h Rf Power Field Effect Transistors Freescale Semiconductor, Inc
  mrfe6s9130h Rf Power Field Effect Transistors Freescale Semiconductor, Inc
  MRFE6S9160HS Freescale Semiconductor, Inc
  MRFE6S9125NR1 MOSFET RF N-CH 27W TO-270-4 Freescale Semiconductor
  mrfe6s9125n Rf Power Field Effect Transistors Freescale Semiconductor, Inc
  MRFE6S9125NBR1 MOSFET RF N-CH 27W TO-272-4 Freescale Semiconductor

MRFE6S9135HSR5 Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

  • Page 2

    ... Vdc 2.2 2.9 3.7 Vdc 0.15 0.2 0.35 Vdc — 1.3 — pF — 410 — pF — 343 — Avg CDMA 940 MHz, out 30.5 32.3 — % 6.1 6.4 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

  • Page 3

    ... W CW 940 MHz out Part - to - Part Insertion Phase Variation @ 940 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 28 Vdc VBW = 39 W Avg ...

  • Page 4

    ... SUPPLY + C23 C24 C12 OUTPUT Z13 Z14 Z15 Z16 Z17 C25 C13 C10 C14 V SUPPLY + C18 C19 = 3.5 r Part Number Manufacturer Fair- Rite ATC Johanson ATC Nippon Chemi - Con Murata ATC ATC United Chemi - Con Vishay Vishay RF Device Data Freescale Semiconductor RF ...

  • Page 5

    ... Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C24 C21 C22 C20 C23 C14 C11 C12 C25 C9 C10 C13 C18 C15 C16 C17 MRFE6S9135H C19 Rev. 1 MRFE6S9135HR3 MRFE6S9135HSR3 5 ...

  • Page 6

    ... Vdc 935 MHz 945 MHz = 500 mA 750 mA 1000 mA 1250 mA 1500 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 400 ...

  • Page 7

    ... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −10 DQ (f1 + f2)/2 = Center Frequency of 940 MHz −20 −30 −40 IM7−U −50 IM7−L −60 100 400 1 Figure 8 ...

  • Page 8

    ... Input Signal −50 −60 −70 −80 −ACPR in 3.84 MHz − −100 −110 −9 −7.2 Figure 14. Single - Carrier W - CDMA Spectrum 230 250 3.84 MHz Channel BW −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 9 ...

  • Page 9

    ... MHz Z load Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω 820 MHz source f = 820 MHz f = 980 MHz Vdc 1000 mA Avg out f Z source MHz W 820 3.39 - j6.99 2.18 - j0.80 840 3.32 - j6.86 2.20 - j0.71 860 3.05 - j6.74 2 ...

  • Page 10

    ... N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F RF Device Data Freescale Semiconductor ...

  • Page 11

    ... The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 • Initial Release of Data Sheet 1 Nov. 2007 • Updated Fig. 12, MTTF versus Junction Temperature, to reflect a 32.3% typical efficiency rating Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6S9135HR3 MRFE6S9135HSR3 11 ...

  • Page 12

    ... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

Related keywords:

  • mrfe6s9125n
  • mrfe6s9205hs
  • mrfe6vp61k25hr5
  • mrfe6vp61k25hr6
  • mrfe6s9060nr1
  • mrfe6s9045nr1
  • mrfe6vp6300hr5
  • MRFE6S9135HSR5 datasheet
  • MRFE6S9135HSR5 data sheet
  • MRFE6S9135HSR5 pdf datasheet
  • MRFE6S9135HSR5 component
  • MRFE6S9135HSR5 part
  • MRFE6S9135HSR5 distributor
  • MRFE6S9135HSR5 RoHS
  • MRFE6S9135HSR5 datasheet download