MRFE6S9205HSR5

Manufacturer Part NumberMRFE6S9205HSR5
DescriptionMOSFET RF N-CH 58W 28V NI-880S
ManufacturerFreescale Semiconductor
MRFE6S9205HSR5 datasheets

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Specifications of MRFE6S9205HSR5

Transistor TypeN-ChannelFrequency880MHz
Gain21.2dBVoltage - Rated66V
Current Rating10µACurrent - Test1.4A
Voltage - Test28VPower - Output58W
Package / CaseNI-880SLead Free Status / RoHS StatusLead free / RoHS Compliant
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Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Table 4. Electrical Characteristics
(T
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
= 66 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V
= 28 Vdc, V
= 0 Vdc)
DS
GS
Gate - Source Leakage Current
(V
= 5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V
= 10 Vdc, I
= 600 μAdc)
DS
D
Gate Quiescent Voltage
(V
= 28 Vdc, I
= 1400 mAdc, Measured in Functional Test)
DD
D
Drain - Source On - Voltage
(V
= 10 Vdc, I
= 4.2 Adc)
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
Output Capacitance
(V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
Input Capacitance
(V
= 28 Vdc, V
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
MRFE6S9205HR3 MRFE6S9205HSR3
2
= 25°C unless otherwise noted)
C
Symbol
I
DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
C
rss
= 0 Vdc)
GS
C
oss
= 0 Vdc)
GS
C
iss
= 28 Vdc, I
= 1400 mA, P
DD
DQ
G
ps
η
D
PAR
ACPR
IRL
Class
Class 1C (Minimum)
Class B (Minimum)
Class IV (Minimum)
Min
Typ
Max
Unit
—
—
10
μAdc
—
—
1
μAdc
—
—
10
μAdc
1.4
2.1
2.9
Vdc
2.2
2.9
3.7
Vdc
0.1
0.2
0.3
Vdc
—
1.63
—
pF
—
590
—
pF
—
491
—
pF
= 58 W Avg. W - CDMA, f = 880 MHz,
out
20
21.2
23
dB
32
34
—
%
6
6.3
—
dB
—
- 39.1
- 37.5
dBc
—
- 12.5
- 8.5
dB
(continued)
RF Device Data
Freescale Semiconductor

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