MRFE6S9205HSR5

Manufacturer Part NumberMRFE6S9205HSR5
DescriptionMOSFET RF N-CH 58W 28V NI-880S
ManufacturerFreescale Semiconductor
MRFE6S9205HSR5 datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of MRFE6S9205HSR5

Transistor TypeN-ChannelFrequency880MHz
Gain21.2dBVoltage - Rated66V
Current Rating10µACurrent - Test1.4A
Voltage - Test28VPower - Output58W
Package / CaseNI-880SLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
Page 3/12

Download datasheet (405Kb)Embed
PrevNext
Table 4. Electrical Characteristics
(T
Characteristic
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Video Bandwidth @ 220 W PEP P
where IM3 = - 30 dBc
out
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
= 200 W CW
out
Average Group Delay @ P
= 200 W CW, f = 880 MHz
out
Part - to - Part Insertion Phase Variation @ P
f = 880 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
RF Device Data
Freescale Semiconductor
= 25°C unless otherwise noted) (continued)
C
Symbol
= 28 Vdc, I
DD
DQ
VBW
= 58 W Avg.
G
out
F
Φ
Delay
= 200 W CW,
ΔΦ
out
ΔG
ΔP1dB
Min
Typ
Max
= 1400 mA, 865 - 900 MHz Bandwidth
10
0.315
0.59
4.27
26.3
0.016
0.006
MRFE6S9205HR3 MRFE6S9205HSR3
Unit
MHz
dB
°
ns
°
dB/°C
dBm/°C
3