MRFE6S9205HSR5

Manufacturer Part NumberMRFE6S9205HSR5
DescriptionMOSFET RF N-CH 58W 28V NI-880S
ManufacturerFreescale Semiconductor
MRFE6S9205HSR5 datasheets

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Specifications of MRFE6S9205HSR5

Transistor TypeN-ChannelFrequency880MHz
Gain21.2dBVoltage - Rated66V
Current Rating10µACurrent - Test1.4A
Voltage - Test28VPower - Output58W
Package / CaseNI-880SLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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−10
V
= 28 Vdc, I
= 1400 mA
DD
DQ
f1 = 875 MHz, f2 = 885 MHz
−20
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
1
0
−1
−2
−3
−4
−5
30
23
22
21
20
19
18
17
16
1
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
V
DD
Two−Tone Measurements
−10
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
−30
−40
−50
−60
100
400
1
Figure 8. Intermodulation Distortion Products
Ideal
−1 dB = 51.81 W
−2 dB = 73.12 W
η
D
−3 dB = 99.2 W
V
= 28 Vdc, I
= 1400 mA
DD
DQ
f = 880 MHz, Input PAR = 7.5 dB
40
50
60
70
80
90
P
, OUTPUT POWER (WATTS)
out
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
T
= −30_C
C
G
ps
25_C
25_C
85_C
V
= 28 Vdc
DD
I
= 1400 mA
DQ
η
D
f = 880 MHz
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
= 28 Vdc, P
= 220 W (PEP), I
= 1400 mA
out
DQ
IM3−U
IM3−L
IM5−U
IM5−L
IM7−U
IM7−L
10
TWO−TONE SPACING (MHz)
versus Output Power
50
45
40
35
Actual
30
25
20
100
110
70
−30_C
60
50
40
85_C
30
20
10
0
400
MRFE6S9205HR3 MRFE6S9205HSR3
100
7

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