MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet

MRF8P20160HSR3

Manufacturer Part Number

MRF8P20160HSR3

Description

DISCRETE RF FET

Manufacturer

Freescale Semiconductor

Datasheet

1.MRF8P20160HR3.pdf (17 pages)

Specifications of MRF8P20160HSR3

Transistor Type

2 N-Channel (Dual)

Frequency

1.92GHz

Gain

16.5dB

Voltage - Rated

65V

Current - Test

550mA

Voltage - Test

28V

Power - Output

37W

Package / Case

NI-780HS-4

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current Rating

Noise Figure

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF8P20160HSR3

Manufacturer:

FREESCALE

Quantity:

1 400

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

2025 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

• Typical Doherty Single--Carrier W--CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW

• Typical P

2025 MHz

• Typical Doherty Single--Carrier W--CDMA Performance: V

Features

• Production Tested in a Symmetrical Doherty Configuration

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Large--Signal Load--Pull Parameters and Common

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Designed for CDMA base station applications with frequencies from 1880 to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @

0.01% Probability on CCDF.

Output Power (3 dB Input Overdrive from Rated P

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @

0.01% Probability on CCDF.

Source S--Parameters

Operation

NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

DQA

calculators by product.

= 550 mA, V

Frequency

1880 MHz

1900 MHz

1920 MHz

2025 MHz

out

@ 3 dB Compression Point ≃ 160 Watts CW

GSB

= 1.6 Vdc, P

(dB)

16.5

16.6

16.5

(dB)

15.3

(1,2)

Rating

out

44.8

45.3

45.8

44.0

(%)

= 37 Watts Avg., IQ Magnitude

Output PAR

(dB)

7.0

6.9

6.8

out

)

= 28 Volts,

ACPR

(dBc)

--29.8

--30.1

--30.6

(dBc)

--30.0

Symbol

DSS

stg

Document Number: MRF8P2160H

MRF8P20160HR3 MRF8P20160HSR3

CASE 465H- -02, STYLE 1

inA

1880- -2025 MHz, 37 W AVG., 28 V

CASE 465M- -01, STYLE 1

MRF8P20160HSR3

inB

MRF8P20160HR3

MRF8P20160HSR3

Figure 1. Pin Connections

GSA

GSB

MRF8P20160HR3

LATERAL N- -CHANNEL

RF POWER MOSFETs

NI- -780S- -4

NI- -780- -4

SINGLE W- -CDMA

-- 65 to +150

--0.5, +65

--6.0, +10

(Top View)

32, +0

Value

150

225

Rev. 1, 7/2010

2 RF

outA

outB

Unit

Vdc

°C

DSA

DSB

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