2SA1790GCL Panasonic - SSG, 2SA1790GCL Datasheet

TRANS PNP 20VCEO 30MA SSMINI-3

2SA1790GCL

Manufacturer Part Number
2SA1790GCL
Description
TRANS PNP 20VCEO 30MA SSMINI-3
Manufacturer
Panasonic - SSG
Datasheet

Specifications of 2SA1790GCL

Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
300MHz
Noise Figure (db Typ @ F)
2.8dB ~ 4dB @ 5MHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 1mA, 10V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SS Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Other names
2SA1790GCLTR
Transistors
2SA1790G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
automatic insertion through the tape packing
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
70 to 140
*
T
B
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
I
T
CBO
CEO
EBO
a
110 to 220
I
I
I
C
stg
V
CE(sat)
C
h
NF
Z
C
j
CBO
CEO
EBO
f
= 25°C
FE
BE
T
rb
re
C
−55 to +125
Rating
V
V
V
V
V
I
V
V
V
V
C
−30
−20
−30
125
125
CE
CB
CE
EB
CE
CB
CB
CB
CB
−5
= −10 mA, I
SJC00379AED
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
mA
C
E
E
E
°C
°C
V
V
V
C
B
C
B
E
E
= 0
= 1 mA, f = 200 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 2 MHz
= −1 mA
= −1 mA
= 0
= 0
= −1 mA
= 1 mA, f = 10.7 MHz
■ Package
• Code
• Marking Symbol: E
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
Min
150
70
− 0.7
− 0.1
Typ
300
2.8
1.2
22
− 0.1
−100
Max
−10
220
4.0
2.0
50
MHz
Unit
µA
µA
µA
dB
pF
V
V
1

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