SD1477 STMicroelectronics, SD1477 Datasheet

TRANSISTOR NPN RF BIPO VHF 6LEAD

SD1477

Manufacturer Part Number
SD1477
Description
TRANSISTOR NPN RF BIPO VHF 6LEAD
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD1477

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
18V
Gain
6dB
Power - Max
270W
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 5A, 5V
Current - Collector (ic) (max)
20A
Mounting Type
Surface Mount
Package / Case
M111
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Other names
497-6723
SD1477

Available stocks

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Manufacturer
Quantity
Price
Part Number:
SD1477
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ST
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SD1477
Manufacturer:
ST
Quantity:
20 000
Part Number:
SD1477-2
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Part Number:
SD1477-28
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FEATURES SUMMARY
DESCRIPTION
The SD1477 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
FM communications. This device utilizes diffused
emitter resistors to withstand extremely high
VSWR under rated operating conditions, and is in-
ternally input matched to optimize power gain and
efficiency over the 136 - 175 MHz band.
Table 1. Order Codes
June 2004
175 MHz
12.5 VOLTS
COMMON EMITTER
P
OUT
Order Codes
= 100 W MIN. WITH 6.0 dB GAIN
SD1477
Marking
SD1477
RF POWER BIPOLAR TRANSISTORS
VHF MOBILE APPLICATIONS
Figure 1. Package
Figure 2. Pin Connection
Package
M111
1. Collector
2. Base
.500 6L FL (M111)
epoxy sealed
PLASTIC TRAYS
3. Emitter
4. Emitter
Packaging
SD1477
REV. 2
1/9

Related parts for SD1477

SD1477 Summary of contents

Page 1

... P = 100 W MIN. WITH 6.0 dB GAIN ■ OUT DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused emitter resistors to withstand extremely high VSWR under rated operating conditions, and is in- ternally input matched to optimize power gain and efficiency over the 136 - 175 MHz band ...

Page 2

... SD1477 Table 2. Absolute Maximum Ratings (T Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Collector-Emitter Voltage CES V Emitter-Base Voltage EBO I Device Current C P Power Dissipation DISS T Junction Temperature J Storage Temperature T STG Table 3. Thermal Data Symbol R Junction-Case Thermal Resistance TH(j-c) ELECTRICAL SPECIFICATIONS (T Table 4. Static ...

Page 3

... TYPICAL PERFORMANCE Figure 3. Power Output vs Frequency 120 100 12 130 140 150 160 Frequency (MHz) Figure 4. Power Output vs Power Input 120 100 170 180 12 Power Input (Watts) SD1477 136 MHz 175 MHz 25 3/9 ...

Page 4

... SD1477 IMPEDANCE DATA Figure 5. Typical Input Impedance Input Network + –1 –2 130 140 150 160 Power Input (Watts) Table 6. Impedance Data FREQ. 175 MHz 4/9 Figure 6. Typical Collector Load Impedance 136 MHz 20 170 180 190 Z (Ω) IN 1.5 – +1.0 +.5 0 –.5 – ...

Page 5

... TEST CIRCUIT Figure 7. Test Circuit SD1477 5/9 ...

Page 6

... SD1477 Table 7. Test Circuit C1, C2 Arco 462 5 - 80pF C3, C4 Unelco 100pF, 350V C5, C6 Unelco 120pF, 350V C7, C8 Arco 463 9 - 180pF C9, C12 Unelco 1000pF, 350V C10 Erie .15µF, 200V Red Cap C11 25µF, 25V Electrolytic C13 10µF, 25V Electrolytic L1 1 Turn, #12, 1/4" I.D. ...

Page 7

... Min Typ 0.150 0.045 0.210 0.835 0.200 0.490 0.003 0.125 0.720 0.970 0.095 0.150 SD1477 Max 0.160 0.220 0.865 0.210 0.510 0.007 0.730 0.980 0.105 0.170 0.280 7/9 ...

Page 8

... SD1477 REVISION HISTORY Table 9. Revision History Date Revision November-1992 1 7-June-2004 2 8/9 Description of Changes First Issue Stylesheet update. No content change. ...

Page 9

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES www.st.com SD1477 9/9 ...

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