BFG520,215 NXP Semiconductors, BFG520,215 Datasheet
BFG520,215
Specifications of BFG520,215
Related parts for BFG520,215
BFG520,215 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc ...
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... NXP Semiconductors NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I DC collector current C P total power dissipation tot T storage temperature stg T junction temperature j THERMAL RESISTANCE ...
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... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral UM power gain (note insertion power gain ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.3 Power derating curve. 0.6 handbook, halfpage C re (pF) 0.4 0 MHz. C Fig.5 Feedback capacitance as a function of collector-base voltage. BFG520; BFG520/X; BFG520/XR MRA670-1 handbook, halfpage h FE 150 200 Fig.4 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G max gain. 25 handbook, halfpage gain (dB) MSG 900 MHz amb Fig.7 Gain as a function of collector current. 50 handbook, halfpage gain G UM (dB) 40 MSG mA amb Fig.9 Gain as a function of frequency. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 20 handbook, halfpage d im (dB Fig.11 Intermodulation distortion as a function of collector current. 5 handbook, halfpage F min (dB ass 3 2000 MHz 2 F min 1000 MHz 1 900 MHz 500 MHz amb Fig.13 Minimum noise figure and associated available gain as functions of collector current. BFG520 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180 mA 900 MHz handbook, full pagewidth G max = 13 dB 180 mA GHz BFG520; BFG520/X; BFG520/XR stability 90 circle 1 135 0.5 F min = 0.2 OPT 0 0.5 135 1 90 Fig.15 Noise circle figure. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA Fig.18 Common emitter forward transmission coefficient ( 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 135 135 40 MHz 3 GHz 135 90 Rev November 2007 Product specifi ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 0. mA Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 mA Fig.20 Common emitter output reflection coefficient (S BFG520; BFG520/X; BFG520/XR 90 135 3 GHz 40 MHz 0.20 0.15 0.10 0.05 135 135 0.5 0.2 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B BFG520; BFG520/X; BFG520/ scale 0.15 3.0 1.4 1.9 1.7 0.09 2 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R BFG520; BFG520/X; BFG520/ scale 0.15 3.0 1.4 1.9 1.7 0.09 2 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BFG520XR_N_4 20071123 • Modifications: Pinning table on page 2; changed code BFG520XR_CNV_3 19950901 BFG520XR_2 - BFG520XR_1 - BFG520; BFG520/X; BFG520/XR Data sheet status Change notice Product data sheet - Product specification - Product specification - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘ ...