NE46234-T1-SE-AZ CEL, NE46234-T1-SE-AZ Datasheet

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NE46234-T1-SE-AZ

Manufacturer Part Number
NE46234-T1-SE-AZ
Description
TRANS RF NPN 6GHZ 12V SOT89
Manufacturer
CEL
Datasheet
1.NE46234-T1-AZ.pdf (7 pages)

Specifications of NE46234-T1-SE-AZ

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
2.3dB ~ 3.5dB @ 1GHz
Power - Max
1.8W
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 50mA, 5V
Current - Collector (ic) (max)
150mA
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
DESCRIPTION
(V
employs surface mount type plastic package, power mini mold (SOT-89).
FEATURES
• Low distortion, low voltage: IM
• Large P
• Small package : 3-pin power mini mold package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
NE46234-AZ
2SC4703
NE46234-T1-AZ
2SC4703-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
CE
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on double-sided copper-clad 16 cm
The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It
Part Number
tot
The unit sample quantity is 25 pcs.
: P
Parameter
tot
= 1.8 W (Mounted on double-sided copper-clad 16 cm
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
25 pcs (Non reel)
1 kpcs/reel
Quantity
2
= 55 dBc TYP., IM
Symbol
P
V
V
V
tot
T
CBO
CEO
I
T
The mark  shows major revised points.
EBO
stg
C
Note
j
3-PIN POWER MINIMOLD
A
= +25C)
NE46234 / 2SC4703
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
3
65 to +150
2
= 76 dBc TYP. @ V
Ratings
 0.7 mm (t) ceramic substrate
150
150
2.5
1.8
25
12
NPN SILICON RF TRANSISTOR
2
 0.7 mm (t) ceramic substrate)
CE
Unit
mA
C
C
W
V
V
V
Supplying Form
= 5 V, I
C
= 50 mA, V
O
= 105 dB
V/75

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NE46234-T1-SE-AZ Summary of contents

Page 1

... NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage ( V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use employs surface mount type plastic package, power mini mold (SOT-89). ...

Page 2

...  V/75  105  190  200 MHz  s, Duty Cycle  125 to 250 Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 MIN. TYP. MAX. Unit  – – 1.5 A  – – 1.5 A – – 50 250 – – 6.0 GHz – ...

Page 3

... TYPICAL CHARACTERISTICS ( +25C) Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 3 ...

Page 4

... Remark The graphs indicate nominal characteristics. S-PARAMETERS 4 Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 ...

Page 5

... PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (UNIT: mm) Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 5 ...

Page 6

... Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 ...

Page 7

... NE46234 / 2SC4703 ...

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