KSC2755YMTF Fairchild Semiconductor, KSC2755YMTF Datasheet

TRANSISTOR NPN 30V 20MA SOT-23

KSC2755YMTF

Manufacturer Part Number
KSC2755YMTF
Description
TRANSISTOR NPN 30V 20MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC2755YMTF

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
30V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
0.3dB @ 200MHz
Gain
20dB ~ 23dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 3mA, 10V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
RF AMP, FOR VHF &TV TUNER
• Low NF, High G
• Forward AGC Capability to 30 dB
• NF=2.0dB (TYP.), G
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
h
f
C
G
I
NF
C
CBO
T
AGC
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
RE
PE
Symbol
Classification
Classification
h
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current
Noise Figure
FE
PE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
PE
=23dB (TYP.) at f=200MHz
Parameter
T
60 ~ 120
a
=25 C unless otherwise noted
T
R
Parameter
a
=25 C unless otherwise noted
KSC2755
Marking
V
V
V
f=1MHz, V
V
f=200MHz
f=200MHz
I
V
f=200MHz
E
CB
CE
CE
CE
CE
at G
=20V, I
=10V, I
=10V, I
=10V, I
=10V, I
H1 O
Test Condition
R
= -30dB
CB
E
C
C
C
C
=0
=3mA
=3mA
=3mA
=3mA
=10V, I
90 ~ 180
O
E
=0
h
FE
grade
1. Base 2. Emitter 3. Collector
Min.
400
60
20
-55 ~ 150
3
Value
150
150
30
30
20
5
Typ.
120
600
0.3
-10
2.0
23
120 ~ 240
1
Max.
240
-12
Y
0.1
0.5
0.3
SOT-23
Rev. A2, September 2002
2
Units
mW
mA
V
V
V
C
C
Units
MHz
mA
dB
dB
pF
A

Related parts for KSC2755YMTF

KSC2755YMTF Summary of contents

Page 1

... FE f Current Gain Bandwidth Product T C Reverse Transfer Capacitance RE G Power Gain PE I AGC Current AGC NF Noise Figure h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2755 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =20V =10V, I =3mA =10V, I ...

Page 2

... [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristics 10000 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure ©2002 Fairchild Semiconductor Corporation I = 120 A B 1000 I = 100 100 0 10000 1000 100 10 100 0.1 Figure 4. Base-Emitter Saturation Voltage 0.1 ...

Page 3

... CONDUCTANCE re Figure 9. yre - f 5 yoe =10V =3mA C 5mA 1 f=100MHz 10mA 0 0.00 0.25 0.50 g [ms], CONDUCTANCE oe Figure 11. yoe - f ©2002 Fairchild Semiconductor Corporation (Continued f=100MHz 0 -20 -40 -60 125 150 175 200 -25 5mA -50 10mA 400MHz -75 -100 -125 0.2 0.3 0.4 - ...

Page 4

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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