KSC3123RMTF Fairchild Semiconductor, KSC3123RMTF Datasheet

TRANSISTOR NPN 20V 50MA SOT-23

KSC3123RMTF

Manufacturer Part Number
KSC3123RMTF
Description
TRANSISTOR NPN 20V 50MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC3123RMTF

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3.8dB ~ 5.5dB @ 200MHz
Gain
20dB ~ 23dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Mixer for UHF TV Tuner
• G
• C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
BV
I
I
h
f
C
G
NF
C
B
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
RE
CE
RE
CE
CEO
Symbol
=23dB
=0.4pF
Classification
Classification
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Conversion Gain
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
60 ~ 120
KSC3123
R
Marking
I
V
V
V
V
V
V
f
V
f
C
L
L
CB
EB
CE
CE
CB
CC
=260MHz
CE
=260MHz
=1mA, I
=3V, I
=25V, I
=10V, I
=10V, I
=10V, I
=12V, f=200MHz,
=12V, f=200MHz
HA O
Test Condition
C
B
=0
=0
E
C
C
E
=0
=5mA
=5mA
=0, f=1MHz
90 ~ 180
O
h
FE
grade
1. Base 2. Emitter 3. Collector
Min.
900
20
60
20
-55 ~ 150
3
Value
1500
150
30
20
50
25
3
1400
Typ.
0.4
3.8
23
1
120 ~ 240
Max.
240
0.1
0.5
5.5
SOT-23
1
Y
Rev. A2, September 2002
2
Units
mW
mA
mA
V
V
V
C
C
Units
MHz
dB
dB
pF
V
A
A

Related parts for KSC3123RMTF

KSC3123RMTF Summary of contents

Page 1

... Emitter Cut-off Current EBO h DC Current Gain FE f Current Gain Bandwidth Product T C Reverse Transfer Capacitance RE G Conversion Gain CE NF Output Capacitance h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC3123 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =1mA =25V =3V, I ...

Page 2

... Typical Characteristics 1000 100 10 0 [mA], COLLECT CURRENT C Figure 1. DC current Gain 10 1 0.1 0 (V), COLLECTOR-BASE VOLTAGE CB Figure (mA), COLLECT CURRENT C Figure ©2002 Fairchild Semiconductor Corporation 10000 1000 100 10 0.1 Figure 2. Current Gain Bandwidth Product - 180 150 120 (mA), COLLECT CURRENT -16 - Figure NF 100 120 ...

Page 3

... Typical Characteristics Figure 7. Figure 9. ©2002 Fairchild Semiconductor Corporation (Continued) Figure 8. Rev. A2, September 2002 ...

Page 4

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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