KSC3123RMTF Fairchild Semiconductor, KSC3123RMTF Datasheet
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Manufacturer Part Number
KSC3123RMTF
Description
TRANSISTOR NPN 20V 50MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of KSC3123RMTF
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3.8dB ~ 5.5dB @ 200MHz
Gain
20dB ~ 23dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Mixer for UHF TV Tuner
• G
• C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
BV
I
I
h
f
C
G
NF
C
B
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
RE
CE
RE
CE
CEO
Symbol
=23dB
=0.4pF
Classification
Classification
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Conversion Gain
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
60 ~ 120
KSC3123
R
Marking
I
V
V
V
V
V
V
f
V
f
C
L
L
CB
EB
CE
CE
CB
CC
=260MHz
CE
=260MHz
=1mA, I
=3V, I
=25V, I
=10V, I
=10V, I
=10V, I
=12V, f=200MHz,
=12V, f=200MHz
HA O
Test Condition
C
B
=0
=0
E
C
C
E
=0
=5mA
=5mA
=0, f=1MHz
90 ~ 180
O
h
FE
grade
1. Base 2. Emitter 3. Collector
Min.
900
20
60
20
-55 ~ 150
3
Value
1500
150
30
20
50
25
3
1400
Typ.
0.4
3.8
23
1
120 ~ 240
Max.
240
0.1
0.5
5.5
SOT-23
1
Y
Rev. A2, September 2002
2
Units
mW
mA
mA
V
V
V
C
C
Units
MHz
dB
dB
pF
V
A
A
Related parts for KSC3123RMTF
KSC3123RMTF Summary of contents
... Emitter Cut-off Current EBO h DC Current Gain FE f Current Gain Bandwidth Product T C Reverse Transfer Capacitance RE G Conversion Gain CE NF Output Capacitance h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC3123 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =1mA =25V =3V, I ...
... Typical Characteristics 1000 100 10 0 [mA], COLLECT CURRENT C Figure 1. DC current Gain 10 1 0.1 0 (V), COLLECTOR-BASE VOLTAGE CB Figure (mA), COLLECT CURRENT C Figure ©2002 Fairchild Semiconductor Corporation 10000 1000 100 10 0.1 Figure 2. Current Gain Bandwidth Product - 180 150 120 (mA), COLLECT CURRENT -16 - Figure NF 100 120 ...
... Typical Characteristics Figure 7. Figure 9. ©2002 Fairchild Semiconductor Corporation (Continued) Figure 8. Rev. A2, September 2002 ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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