MRF392 Freescale Semiconductor, MRF392 Datasheet

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MRF392

Manufacturer Part Number
MRF392
Description
TRANSISTOR RF 125W 500MHZ 744A/1
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF392

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
30V
Gain
8dB ~ 10dB
Power - Max
270W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1A, 5V
Current - Collector (ic) (max)
16A
Mounting Type
Surface Mount
Package / Case
744A-01
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF392
Manufacturer:
M/A-COM
Quantity:
124
Part Number:
MRF392
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
SEMICONDUCTOR TECHNICAL DATA
The RF Line
stages in the 30 to 500 MHz frequency range.
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
REV 8
NOTE:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 1997
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for wideband large–signal output and driver amplifier
Specified 28 Volt, 400 MHz Characteristics —
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
Derate above 25 C
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
amplifier.
PUSH–PULL TRANSISTORS
C
= 25 C (1)
Characteristic
Rating
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
T
I
stg
C
D
J
JC
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
CASE 744A–01, STYLE 1
125 W, 30 to 500 MHz
–65 to +150
CONTROLLED “Q”
NPN SILICON
Value
1.54
Max
0.65
270
200
4.0
30
60
16
Order this document
by MRF392/D
MRF392
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1

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MRF392 Summary of contents

Page 1

... Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. ...

Page 2

... C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 — 680 pF Feedthru C14, C19 — 0.1 F Erie Redcap or Equivalent C15 — L1, L2 — 0.15 H Molded Choke With Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID MRF392 unless otherwise noted) Symbol Min = 0) V ...

Page 3

... CAPACITIVE REACTANCE COMPONENT (–jX) Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA Figure 3. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage Z & are given in OL from base–to–base and collector–to–collector respectively. INDUCTIVE REACTANCE COMPONENT (+jX) MRF392 3 ...

Page 4

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA RF DEVICE DATA MRF392/D ...

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