MRF392

Manufacturer Part NumberMRF392
DescriptionTRANSISTOR RF 125W 500MHZ 744A/1
ManufacturerFreescale Semiconductor
MRF392 datasheet
 


Specifications of MRF392

Transistor Type2 NPN (Dual)Voltage - Collector Emitter Breakdown (max)30V
Gain8dB ~ 10dBPower - Max270W
Dc Current Gain (hfe) (min) @ Ic, Vce40 @ 1A, 5VCurrent - Collector (ic) (max)16A
Mounting TypeSurface MountPackage / Case744A-01
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantFrequency - Transition-
Noise Figure (db Typ @ F)-  
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
= 25 C (1)
C
Derate above 25 C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
REV 8
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
Order this document
by MRF392/D
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
Symbol
Value
Unit
V
30
Vdc
CEO
V
60
Vdc
CBO
V
4.0
Vdc
EBO
I
16
Adc
C
P
270
Watts
D
1.54
W/ C
T
–65 to +150
C
stg
T
200
C
J
Symbol
Max
Unit
R
0.65
C/W
JC
MRF392
1

MRF392 Summary of contents

  • Page 1

    ... Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. ...

  • Page 2

    ... C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 — 680 pF Feedthru C14, C19 — 0.1 F Erie Redcap or Equivalent C15 — L1, L2 — 0.15 H Molded Choke With Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID MRF392 unless otherwise noted) Symbol Min = 0) V ...

  • Page 3

    ... CAPACITIVE REACTANCE COMPONENT (–jX) Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA Figure 3. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage Z & are given in OL from base–to–base and collector–to–collector respectively. INDUCTIVE REACTANCE COMPONENT (+jX) MRF392 3 ...

  • Page 4

    ... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA RF DEVICE DATA MRF392/D ...