MRF392 Freescale Semiconductor, MRF392 Datasheet - Page 2

• Manufacturer Part Number: MRF392
• Description: TRANSISTOR RF 125W 500MHZ 744A/1
• Manufacturer: Freescale Semiconductor

Specifications of MRF392

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 30V
• Gain: 8dB ~ 10dB
• Power - Max: 270W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1A, 5V
• Current - Collector (ic) (max): 16A
• Mounting Type: Surface Mount
• Package / Case: 744A-01
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (1)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (2) — See Figure 1
NOTES:
C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent
C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent
C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent
C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 — 18 pF, Mini Unelco or Equivalent
C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent
C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13, C18 — 680 pF Feedthru
C14, C19 — 0.1 F Erie Redcap or Equivalent
C15 — 20 F, 50 V
L1, L2 — 0.15 H Molded Choke With Ferrite Bead
L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID
L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID
MRF392
Collector–Emitter Breakdown Voltage (I
Collector–Emitter Breakdown Voltage (I
Emitter–Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain (I
Output Capacitance (V
Common–Emitter Amplifier Power Gain
Collector Efficiency
Load Mismatch
2
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
(V
(V
(V
VSWR = 30:1, all phase angles)
CC
CC
CC
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
C
out
out
out
= 1.0 Adc, V
CB
= 125 W, f = 400 MHz)
= 125 W, f = 400 MHz)
= 125 W, f = 400 MHz,
= 28 Vdc, I
Characteristic
CB
= 30 Vdc, I
CE
E
= 5.0 Vdc)
E
= 5.0 mAdc, I
= 0, f = 1.0 MHz)
C
C
E
(T
= 50 mAdc, I
= 50 mAdc, V
= 0)
C
= 25 C unless otherwise noted)
Figure 1. 400 MHz Test Fixture
C
= 0)
B
BE
= 0)
= 0)
B1 — Balun, 50
B2 — Balun, 50
Z1 — Microstrip Line 270 Mil L x 125 Mil W
Z2 — Microstrip Line 375 Mil L x 125 Mil W
Z3 — Microstrip Line 280 Mil L x 125 Mil W
Z4 — Microstrip Line 300 Mil L x 125 Mil W
Z5 — Microstrip Line 350 Mil L x 125 Mil W
Z6 — Microstrip Line 365 Mil L x 125 Mil W
Board Material — 0.0625 Teflon Fiberglass
Board Material —
V
V
V
Symbol
(BR)CEO
(BR)CES
(BR)EBO
I
G
CBO
h
C
FE
ob
pe
CLAD, Double Sided
Semi–Rigid Coaxial Cable 86 Mil OD, 2 L
Semi–Rigid Coaxial Cable 86 Mil OD, 2 L
Min
4.0
8.0
30
60
40
50
—
—
No Degradation in Output Power
MOTOROLA RF DEVICE DATA
Typ
60
75
10
55
—
—
—
—
r
= 2.5
Max
100
5.0
—
—
—
95
—
—
0.05 1 oz. Cu.
mAdc
Unit
Vdc
Vdc
Vdc
dB
pF
—
%