BFP620E6327 Infineon Technologies, BFP620E6327 Datasheet

TRANS NPN RF 2.3V SOT-343

BFP620E6327

Manufacturer Part Number
BFP620E6327
Description
TRANS NPN RF 2.3V SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP620E6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
65GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
21.5dB
Power - Max
185mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 50mA, 1.5V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
BFP620
BFP620INTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFP620E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
NPN Silicon Germanium RF Transistor
• Highly linear low noise RF transistor
• Provides outstanding performance
• Based on Infineon's reliable high volume
• Ideal for CDMA and WLAN applications
• Collector design provides high linearity of
• Maximum stable gain
• Outstanding noise figure NF
• Accurate SPICE GP model enables effective
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFP620
for a wide range of wireless applications
SiGe:C technology
14.5 dBm OP1dB for low voltage application
G
G
Outstanding noise figure NF
design in process
ms
ma
= 21.5 dB at 1.8 GHz
= 11 dB at 6 GHz
Marking
R2s
min
min
1=B
= 0.7 dB at 1.8 GHz
= 1.3 dB at 6 GHz
2=E
Pin Configuration
3=C
1
4=E
-
4
-
3
Package
SOT343
2010-09-21
BFP620
1
2

Related parts for BFP620E6327

BFP620E6327 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineon's reliable high volume SiGe:C technology • Ideal for CDMA and WLAN applications • ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0 °C A ≤ 0 ° Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation ≤ 95 ° Junction temperature Ambient temperature Storage temperature ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 200 mW 160 140 120 100 Permissible Pulse Load = ƒ totmax totDC 0.005 0,01 0,02 ...

Page 5

Third order Intercept Point IP =50 Ω ) (Output parameter 900MHz CE 27 dBm 0. ƒ ...

Page 6

Power gain 1. parameter in GHz Minimum noise figure ...

Page 7

Source impedance for min. noise figure vs. frequency BFP620 2010-09-21 ...

Page 8

SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 10

Datasheet Revision History: 21 September 2010 This datasheet replaces the revision from 20 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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