2N5064,112 NXP Semiconductors, 2N5064,112 Datasheet
2N5064,112
Manufacturer Part Number
2N5064,112
Description
THYRISTOR 8A 200V TO-92
Manufacturer
NXP Semiconductors
Type
SCRr
Datasheet
1.2N5064112.pdf
(4 pages)
Specifications of 2N5064,112
Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
200V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.71V
Current - On State (it (av)) (max)
510mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
10A @ 60Hz
Operating Temperature
-65°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Breakover Current Ibo Max
10 A
Rated Repetitive Off-state Voltage Vdrm
200 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 65 C
Repetitive Peak Off-state Volt
200V
Off-state Voltage
200V
Average On-state Current
510mA
Hold Current
5mA
Gate Trigger Current (max)
200uA
Gate Trigger Voltage (max)
800mV
Peak Reverse Gate Voltage
5V
Package Type
SPT
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
10A
On State Voltage(max)
1.7@1.2AV
Mounting
Through Hole
Pin Count
3
Operating Temp Range
-65C to 125C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2N5064P
2N5064P
568-4443
934002930112
2N5064P
568-4443
934002930112
Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated sensitive gate
thyristor
intended for use in general purpose
switching
applications. This device is intended
to
microcontrollers, logic integreated
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
October 1997
Thyristor
sensitive gate
SYMBOL PARAMETER
V
I
I
I
I
I
I
V
V
P
P
T
T
T(AV)
T(RMS)
TRM
TSM
2
GM
PIN
t
stg
j
DRM
GM
RGM
GM
G(AV)
1
2
3
be
, V
anode
gate
cathode
RRM
in a
interfaced
and
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Repetitive peak on-state
current
Non-repetitive peak
on-state current
I
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
plastic
phase
directly
envelope,
control
to
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave
T
T
all conduction angles
half sine wave; T
t = 8.3 ms
t = 8.3 ms
T
T
T
SYMBOL
V
I
I
I
RRM
c
c
a
a
a
T(AV)
T(RMS)
TSM
DRM
= 25˚C, t
= 25˚C
= 25˚C, over any 16 ms period
67 ˚C
102 ˚C
,
p
= 300 s; f = 120 Hz
PARAMETER
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
3 2 1
1
a
= 25 ˚C prior to surge;
SYMBOL
a
Product specification
MIN.
-65
-65
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
0.255
g
0.51
0.01
200
150
125
0.8
0.4
0.1
MAX. UNIT
10
8
1
5
5
200
0.5
0.8
10
2N5064
Rev 1.200
k
UNIT
A
˚C
˚C
W
W
V
A
A
A
A
A
A
V
V
2
V
A
A
A
s
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2N5064,112 Summary of contents
Page 1
Philips Semiconductors Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly microcontrollers, logic integreated circuits and ...
Page 2
Philips Semiconductors Thyristor sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance th j-c junction to case R Thermal resistance th j-a junction to ambient STATIC CHARACTERISTICS ˚ unless otherwise stated c GK ...
Page 3
Philips Semiconductors Thyristor sensitive gate MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". October 1997 2.54 0.66 1.6 0.56 4.8 max 5.2 max 12.7 min 0.48 0. Fig.1. ...
Page 4
Philips Semiconductors Thyristor sensitive gate DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data ...