2N5064,112 NXP Semiconductors, 2N5064,112 Datasheet - Page 2

• Manufacturer Part Number: 2N5064,112
• Description: THYRISTOR 8A 200V TO-92
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of 2N5064,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.71V
• Current - On State (it (av)) (max): 510mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A @ 60Hz
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 65 C
• Repetitive Peak Off-state Volt: 200V
• Off-state Voltage: 200V
• Average On-state Current: 510mA
• Hold Current: 5mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 800mV
• Peak Reverse Gate Voltage: 5V
• Package Type: SPT
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 10A
• On State Voltage(max): 1.7@1.2AV
• Mounting: Through Hole
• Pin Count: 3
• Operating Temp Range: -65C to 125C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2N5064P; 2N5064P; 568-4443; 934002930112

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997
Thyristor
sensitive gate
SYMBOL PARAMETER
R
R
c
SYMBOL PARAMETER
I
I
I
V
V
I
c
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C, R
= 25 ˚C, R
T
GT
th j-c
th j-a
, I
D
R
/dt
GK
GK
Thermal resistance
junction to case
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
= 1 k unless otherwise stated
= 1 k unless otherwise stated
CONDITIONS
see note:
CONDITIONS
T
T
V
circuit
V
V
I
T
T
T
V
circuit
V
T
T
CONDITIONS
V
exponential waveform; R
I
dI
V
I
dV
T
TM
TM
c
c
j
j
j
j
j
D
D
D
D
D
DM
DM
G
= 1.2 A peak; t
= 25 ˚C
= -65 ˚C
= 125 ˚C
= 25 ˚C
= 125 ˚C
= 25 ˚C
= -65 ˚C
D
/dt = 0.1 A/ s
= V
= 12 V; R
= 12 V; R
= V
= V
= 2 A; V
= 1.6 A; V
/dt = 2 V/ s; R
= 67% V
= 67% V
DRM(max)
DRM(max)
DRM(max)
1
D
GK
GK
DRM(max)
= V
DRM(max)
; R
; R
; V
R
= 35 V; dI
= 1 k
= 1 k
R
L
L
2
DRM(max)
p
= 100 ; gate open
= 100 ; gate open
= V
= 300 s;
GK
; T
; T
= 1 k
RRM(max)
j
j
; I
= 125 ˚C;
= 125 ˚C;
TM
G
GK
= 10 mA;
/dt = 30 A/ s;
= 1 k
0.01
MIN.
MIN.
MIN.
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
200
100
25
2
-
-
-
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
200
350
1.7
0.8
1.2
75
10
50
6
5
-
-
-
-
-
2N5064
Rev 1.200
UNIT
UNIT
UNIT
V/ s
K/W
K/W
mA
mA
V
V
V
V
A
A
A
A
s
s