MCR716T4G ON Semiconductor, MCR716T4G Datasheet

MCR716T4G

Manufacturer Part Number

MCR716T4G

Description

THYRISTOR SCR 4A 400V DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MCR716T4G.pdf (5 pages)

Specifications of MCR716T4G

Scr Type

Sensitive Gate

Voltage - Off State

400V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

2.2V

Current - On State (it (av)) (max)

2.6A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

75µA

Current - Hold (ih) (max)

5mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

25A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Current - On State (it (rms) (max)

Breakover Current Ibo Max

25 A

Rated Repetitive Off-state Voltage Vdrm

400 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

On-state Rms Current (it Rms)

4 A

Forward Voltage Drop

1.3 V

Gate Trigger Voltage (vgt)

0.5 V

Maximum Gate Peak Inverse Voltage

18 V

Gate Trigger Current (igt)

25 uA

Holding Current (ih Max)

1 mA

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MCR716T4GOS
MCR716T4GOS
MCR716T4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR716T4G

Manufacturer:

ON Semiconductor

Quantity:

1 100

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR716T4G

Manufacturer:

Quantity:

12 500

Current page: 1 of 5
Download datasheet (140Kb)

MCR716, MCR718

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

applications such as motor control, process control, temperature, light

and speed control.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

November, 2008 − Rev. 8

Peak Repetitive Off−State Voltage

(Note 1) (T

On−State RMS Current

(180° Conduction Angles; T

Average On−State Current

(180° Conduction Angles; T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 msec)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 msec, T

Operating Junction Temperature Range

Storage Temperature Range

50 to 60 Hz, R

Designed for high volume, low cost, industrial and consumer

Small Size

Passivated Die for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Surface Mount Lead Form − Case 369C

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

Pb−Free Packages are Available

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage

ratings of the devices are exceeded.

DRM

and V

= −40 to 110°C, Sine Wave,

RRM

Rating

= 90°C)

= 1 kW)

for all types can be applied on a continuous basis. Ratings

Machine Model, C u 400 V

= 25°C unless otherwise noted)

= 90°C)

Preferred Device

= 90°C)

MCR716

MCR718

= 110°C)

Symbol

T(RMS)

T(AV)

DRM,

TSM

G(AV)

RRM

stg

−40 to +110

−40 to +150

Value

400

600

4.0

2.6

0.5

0.1

0.2

Unit

°C

sec

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

MCR71x

ORDERING INFORMATION

4.0 AMPERES RMS

400 − 600 VOLTS

MARKING DIAGRAM

http://onsemi.com

PIN ASSIGNMENT

1 2

CASE 369C

= Year

= Work Week

= Device Code

= Pb−Free Package

SCRs

STYLE 4

DPAK

x= 6 or 8

YWW

MCR

71xG

Publication Order Number:

Cathode

Anode

Gate

MCR716/D

Related parts for MCR716T4G

MCR716T4G Summary of contents

Page 1

MCR716, MCR718 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control. Features • Small Size • Passivated Die ...

Page 2

... Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2 current not included in measurements. GK ORDERING INFORMATION Device MCR716T4 MCR716T4G MCR718T4 MCR718T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted.) ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off−State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off−State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On−State Voltage TM I Holding ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature 2.0 1.5 1.0 0.5 0 -40 - JUNCTION ...

Page 5

... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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