2N5061RLRAG ON Semiconductor, 2N5061RLRAG Datasheet - Page 2

• Manufacturer Part Number: 2N5061RLRAG
• Description: THYRISTOR SCR 0.8A 60V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5061RLRAG

• Scr Type: Sensitive Gate
• Voltage - Off State: 60V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 510mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5061RLRAGOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
*Indicates JEDEC Registered Data.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Off−State Voltage (Note 1)
On-State Current RMS (180° Conduction Angles; T
*Average On-State Current
*Peak Non-repetitive Surge Current,
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
*Forward Peak Gate Power (Pulse Width v 1.0 msec; T
*Forward Average Gate Power (T
*Forward Peak Gate Current (Pulse Width v 1.0 msec; T
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; T
*Operating Junction Temperature Range
*Storage Temperature Range
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
curved surface.
(T
50 to 60 Hz, R
(180° Conduction Angles)
(T
(T
T
(1/2 cycle, Sine Wave, 60 Hz)
(180° Conduction Angles)
(T
(T
DRM
A
J
C
C
C
C
= 25°C
= *40 to 110°C, Sine Wave,
= 67°C)
= 102°C)
= 67°C)
= 102°C)
and V
RRM
GK
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
= 1 kW)
(T
J
= 25°C unless otherwise noted)
A
= 25°C, t = 8.3 ms)
Characteristic
2N5060
2N5061
2N5062
2N5064
Rating
C
= 80°C)
A
A
http://onsemi.com
A
= 25°C)
= 25°C)
= 25°C)
2
Symbol
Symbol
I
V
P
V
T(RMS)
V
I
I
R
I
R
P
T(AV)
T(AV)
I
T
DRM,
TSM
G(AV)
RRM
RGM
I
GM
T
qJC
qJA
GM
stg
2
J
t
−40 to +150
−40 to +110
Value
0.255
0.255
0.51
0.51
0.01
Max
100
200
200
0.8
0.4
0.1
1.0
5.0
30
60
10
75
°C/W
°C/W
Unit
Unit
A
°C
°C
W
W
V
A
A
A
A
A
V
2
s