2N5062G ON Semiconductor, 2N5062G Datasheet

2N5062G

Manufacturer Part Number

2N5062G

Description

THYRISTOR SCR 0.8A 100V TO-92

Manufacturer

ON Semiconductor

Datasheets

1.2N5064RLRAG.pdf (7 pages)

2.2N5064G.pdf (5 pages)

Specifications of 2N5062G

Scr Type

Sensitive Gate

Voltage - Off State

100V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

1.7V

Current - On State (it (av)) (max)

510mA

Current - On State (it (rms)) (max)

800mA

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

5mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

10A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Current - On State (it (rms) (max)

800mA

Current Squared Time Rating

0.4

Current, Forward

0.8 A

Current, Surge

10 A

Package Type

TO-92 (TO-226)

Primary Type

SCR

Resistance, Thermal, Junction To Case

75 °C/W

Temperature, Junction, Maximum

+110 °C

Temperature, Operating

-40 to +110 °C

Voltage, Forward

1.7 V

Voltage, Reverse

100 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N5062G
2N5062GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5062G

Manufacturer:

Quantity:

13 148

Current page: 1 of 5
Download datasheet (121Kb)

2N5060 Series

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO−92/TO-226AA package which

is readily adaptable for use in automatic insertion equipment.

Features

•

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Annular PNPN devices designed for high volume consumer

Sensitive Gate Trigger Current − 200 mA Maximum

Low Reverse and Forward Blocking Current − 50 mA Maximum,

Low Holding Current − 5 mA Maximum

Passivated Surface for Reliability and Uniformity

Device Marking: Device Type, e.g., 2N5060, Date Code

Pb−Free Packages are Available*

= 110°C

Preferred Device

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

1 2

SILICON CONTROLLED

0.8 A RMS, 30 − 200 V

ORDERING INFORMATION

50xx

PIN ASSIGNMENT

RECTIFIERS

STYLE 10

CASE 29

TO−92

Specific Device Code

= Year

= Work Week

Cathode

Anode

Gate

MARKING

DIAGRAM

50xx

YWW

Related parts for 2N5062G

2N5062G Summary of contents

Page 1

... Device Marking: Device Type, e.g., 2N5060, Date Code • Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 − ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Peak Repetitive Off−State Voltage (Note *40 to 110°C, Sine Wave Hz kW) 2N5060 GK 2N5061 2N5062 2N5064 On-State Current RMS ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note Rated DRM RRM ON CHARACTERISTICS *Peak Forward On−State Voltage (Note 1.2 A peak @ T = ...

Page 4

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 5

PACKAGE DIMENSIONS TO−92 (TO−226 SEATING K PLANE SEATING K PLANE CASE 29−11 ISSUE AM ...

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