2N5061G ON Semiconductor, 2N5061G Datasheet - Page 3

• Manufacturer Part Number: 2N5061G
• Description: THYRISTOR SCR 0.8A 60V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5061G

• Scr Type: Sensitive Gate
• Voltage - Off State: 60V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 510mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Current Squared Time Rating: 0.4
• Current, Forward: 0.8 A
• Current, Surge: 10 A
• Package Type: TO-92 (TO-226)
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 75 °C/W
• Temperature, Junction, Maximum: +110 °C
• Temperature, Operating: -40 to +110 °C
• Voltage, Forward: 1.7 V
• Voltage, Reverse: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5061GOS

3. R
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. R
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol
V
I
V
I
V
I
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
*Peak Forward On−State Voltage (Note 4)
Gate Trigger Current (Continuous DC) (Note 5)
Gate Trigger Voltage (Continuous DC) (Note 5)
*Gate Non−Trigger Voltage
Holding Current (Note 3)
Turn-On Time
Turn-Off Time
Critical Rate of Rise of Off−State Voltage
DRM
RRM
H
DRM
RRM
TM
(V
(I
*(V
*(V
*(V
Delay Time
Rise Time
(I
Forward Current = 1.0 A, di/dt = 6.0 A/ms
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, I
(Rated V
(V
GK
GK
TM
GT
AK
AK
AK
AK
AK
= 1000 W is included in measurement.
current is not included in measurement.
= 1.0 mA, V
= 1.2 A peak @ T
= Rated V
= Rated V
= 7.0 Vdc, R
= 7.0 Vdc, R
= 7.0 Vdc, initiating current = 20 mA)
DRM
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
, Exponential, R
DRM
DRM
D
GT
= Rated V
L
L
, R
or V
= 1 mA)
= 100 W)
= 100 W)
A
L
= 25°C)
RRM
= 100 W) T
)
DRM
GK
Characteristic
= 1 kW)
,
C
Voltage Current Characteristic of SCR
= 110°C
(T
C
2N5060, 2N5061
2N5062, 2N5064
= 25°C unless otherwise noted)
http://onsemi.com
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 25°C
= −40°C
3
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
at V
RRM
(off state)
on state
I
DRM
Symbol
dv/dt
V
V
V
I
GT
I
t
t
, I
TM
GD
t
GT
+ Current
H
d
q
r
RRM
Forward Blocking Region
I
H
Min
0.1
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TM
(off state)
I
Typ
3.0
0.2
DRM
10
30
30
−
−
−
−
−
−
−
−
−
−
Anode +
at V
Max
200
350
1.7
0.8
1.2
5.0
10
50
10
DRM
−
−
−
−
−
−
+ Voltage
Unit
V/ms
mA
mA
mA
mA
ms
ms
V
V
V