S6055WTP Littelfuse / Teccor Brand Thyristors, S6055WTP Datasheet - Page 2

NON-SENSITIVE GATE 55.0A 600V

S6055WTP

Manufacturer Part Number
S6055WTP
Description
NON-SENSITIVE GATE 55.0A 600V
Manufacturer
Littelfuse / Teccor Brand Thyristors
Datasheets

Specifications of S6055WTP

Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.8V
Current - On State (it (av)) (max)
35A
Current - On State (it (rms)) (max)
55A
Current - Gate Trigger (igt) (max)
40mA
Current - Hold (ih) (max)
60mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
550A, 650A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-218X-3
Current - On State (it (rms) (max)
55A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
S6055W
S6055W
SCRs
Specific Test Conditions
di/dt — Maximum rate-of-rise of on-state current; I
dv/dt — Critical rate of applied forward voltage
I
I
I
I
I
I
I
P
P
t
t
http://www.littelfuse.com
+1 972-580-7777
2
DRM
gt
GM
H
T
TSM
gt
q
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
G(AV)
GM
TYPE
— Maximum on-state current
— dc holding current; gate open
— Circuit commutated turn-off time
— dc gate trigger current; V
— Gate controlled turn-on time; gate pulse = 100 mA; minimum
10 A
12 A
1 A
6 A
8 A
— Peak gate current
≤ 0.1 µs rise time
for fusing
V
devices and 30 Ω for 20 to 70 A devices
width = 15 µs with rise time ≤ 0.1 µs
— Peak one-cycle forward surge current
— Peak gate power dissipation
and I
RRM
— Average gate power dissipation
RRM
S201E
S401E
S601E
— Peak off-state forward and reverse current at V
TO-92
K
G
A
K
SK006L
SK008L
SK010L
Isolated
TO-220
S2006L
S4006L
S6006L
S8006L
S2008L
S4008L
S6008L
S8008L
S2010L
S4010L
S6010L
S8010L
A
D
G
= 12 V dc; R
See “Package Dimensions” section for variations. (11)
S2006F1
S4006F1
S6006F1
S2008F1
S4008F1
S6008F1
S2010F1
S4010F1
S6010F1
K
TO-202
A
L
G
A
= 60 Ω for 1 to 16 A
GT
Part Number
K
SK008R
SK010R
SK012R
S2008R
S4008R
S6008R
S8008R
S2010R
S4010R
S6010R
S8010R
S2012R
S4012R
S6012R
S8012R
TO-220
= 150 mA with
A
A
G
DRM
Non-isolated
K
SK006V
SK008V
SK010V
SK012V
S2006V
S4006V
S6006V
S8006V
S2008V
S4008V
S6008V
S8008V
S2010V
S4010V
S6010V
S8010V
S2012V
S4012V
S6012V
S8012V
TO-251
V-Pak
and
A
A
E6 - 2
G
V
V
V
General Notes
DRM
gt
TM
K
Compak
G
S2N1
S4N1
S6N1
— DC gate trigger voltage; V
devices and 30 Ω for 20 to 70 A devices
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Operating temperature range (T
devices and -40 °C to +125 °C for all other packages.
Storage temperature range (T
devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and
-40 °C to +125 °C for all others.
Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (T
outline drawings in the “Package Dimensions” sectionof this
catalog.
— Peak on-state voltage at maximum rated RMS current
and V
A
RRM
A
— Repetitive peak off-state forward and reverse voltage
SK006D
SK008D
SK010D
SK012D
S2006D
S4006D
S6006D
S8006D
S2008D
S4008D
S6008D
S8008D
S2010D
S4010D
S6010D
S8010D
S2012D
S4012D
S6012D
S8012D
TO-252
D-Pak
K
A
G
C
I
) is measured as shown on dimensional
T(RMS)
MAX
10
10
10
10
10
12
12
12
12
12
1
1
1
6
6
6
6
6
8
8
8
8
8
D
(1) (2) (15)
S
= 12 V dc; R
) is -65 °C to +150 °C for TO-92
Amps
J
I
) is -65 °C to +125 °C for TO-92
T
I
MAX
0.64
0.64
0.64
T(AV)
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
7.6
7.6
7.6
7.6
7.6
Thyristor Product Catalog
L
& V
= 60 Ω for 1 to 16 A
V
Volts
1000
1000
1000
1000
©2004 Littelfuse, Inc.
MIN
200
400
600
200
400
600
800
200
400
600
800
200
400
600
800
200
400
600
800
DRM
RRM
Data Sheets
MIN
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
mAmps
I
(4)
GT
MAX
10
10
10
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20

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