BT169D/01,112 NXP Semiconductors, BT169D/01,112 Datasheet

THYRISTOR 400V 50MA TO-92

BT169D/01,112

Manufacturer Part Number
BT169D/01,112
Description
THYRISTOR 400V 50MA TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.BT169G112.pdf (12 pages)

Specifications of BT169D/01,112

Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Rated Repetitive Off-state Voltage Vdrm
400 V
Breakover Current Ibo Max
9 A
On-state Rms Current (it Rms)
0.8 A
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Gate Trigger Voltage (vgt)
0.5 V
Gate Trigger Current (igt)
50 uA
Holding Current (ih Max)
5 mA
Forward Voltage Drop
1.25 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
400 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934019180112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BT169D/01,112
Manufacturer:
NXP Semiconductors
Quantity:
4 700
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
anode (a)
gate (g)
cathode (k)
Passivated, sensitive gate thyristors in a SOT54 plastic package.
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
General purpose switching and phase control applications.
V
V
V
DRM
DRM
DRM
, V
, V
, V
RRM
RRM
RRM
200 V (BT169B)
400 V (BT169D)
600 V (BT169G)
Simplified outline
SOT54 (TO-92)
I
I
I
T(RMS)
T(AV)
TSM
3
2
1
8 A.
0.5 A
0.8 A
Product data sheet
Symbol
sym037

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BT169D/01,112 Summary of contents

Page 1

BT169 series Thyristors logic level Rev. 04 — 23 August 2004 1. Product profile 1.1 General description Passivated, sensitive gate thyristors in a SOT54 plastic package. 1.2 Features Designed to be interfaced directly to microcontrollers, logic integrated circuits and other ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name BT169B - BT169D BT169G 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter repetitive ...

Page 3

Philips Semiconductors 0.8 P tot (W) 0.6 0 form factor = I /I T(RMS) T(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values TSM (A) 8 ...

Page 4

Philips Semiconductors TSM ( ms. p Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values T(RMS) (A) 1.5 1 ...

Page 5

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ ...

Page 6

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise stated. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage ...

Page 7

Philips Semiconductors 1.6 V GT(Tj) V GT(25 C) 1.2 0.8 0 Fig 7. Normalized gate trigger voltage as a function of junction temperature ( (1) (2) (3) 0 0.4 1.2 ...

Page 8

Philips Semiconductors 3 I H(Tj Fig 11. Normalized holding current as a function of junction temperature. 7. Package information Epoxy meets requirements of UL94 V-0 ...

Page 9

Philips Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 ...

Page 10

Philips Semiconductors 9. Revision history Table 6: Revision history Document ID Release date BT169_SERIES_4 20040823 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 11

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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