NCR169DRLRAG ON Semiconductor, NCR169DRLRAG Datasheet

SCR 0.8A 400V TO-92

NCR169DRLRAG

Manufacturer Part Number
NCR169DRLRAG
Description
SCR 0.8A 400V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCR169DRLRAG

Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
10A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current - On State (it (rms) (max)
800mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-
NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
Peak Repetitive Off−State Voltage (Note 1.)
On-State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Other Logic Circuits
Sensitive Gate Allows Direct Triggering by Microcontrollers and
On−State Current Rating of 0.8 Amperes RMS at 80°C
Surge Current Capability − 10 Amperes
Immunity to dV/dt − 20 V/μsec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
Pb−Free Packages are Available
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(T
60 Hz; Gate Open)
(T
(1/2 Cycle, Sine Wave, 60 Hz,
T
(T
(T
(T
(T
@ Rate V
DRM
PNPN device designed for line-powered general purpose
J
A
A
A
A
J
C
= 25°C)
= *40 to 110°C, Sine Wave, 50 to
= 25°C, Pulse Width v 1.0
= 25°C, t = 20 ms)
= 25°C, Pulse Width v 1.0
= 25°C, Pulse Width v 1.0
= 80°C) 180° Conduction Angles
and V
RRM
RRM
and V
Rating
for all types can be applied on a continuous basis. Ratings
DRM
(T
J
= 25°C unless otherwise noted)
μ
μ
μ
s)
s)
s)
Symbol
I
P
V
V
T(RMS)
V
I
P
T
G(AV)
I
DRM,
TSM
RRM
GRM
GM
T
I
GM
stg
2
J
t
−40 to
−40 to
Value
0.415
0.10
400
150
110
0.8
0.1
1.0
5.0
10
1
Amps
Volts
Volts
Unit
Amp
Watt
Watt
Amp
A
°C
°C
2
s
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
2
3
(TO−226AA)
A
L
Y
WW = Work Week
G
(Note: Microdot may be in either location)
K
CASE 029
STYLE 10
ORDERING INFORMATION
G
0.8 AMPERES RMS
TO−92
A
A
= Assembly Location
= Wafer Lot
= Year
= Pb−Free Package
http://onsemi.com
PIN ASSIGNMENT
400 VOLTS
SCR
Publication Order Number:
Cathode
Anode
Gate
G
MARKING
DIAGRAM
ALYWWG
1 2 3
K
169D
NCR
NCR169D/D
G

Related parts for NCR169DRLRAG

NCR169DRLRAG Summary of contents

Page 1

NCR169D General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction to Case − Junction to Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 1 Rated V ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak on State Voltage ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 3. Typical Holding Current versus Junction Temperature 120 110 100 30° 60° 0.1 0.2 0.3 I ...

Page 5

TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL Symbol D Tape Feedhole Diameter D2 Component Lead Thickness Dimension F1, F2 Component Lead Pitch H Bottom of Component to Seating Plane H1 Feedhole Location H2A ...

Page 6

... Description of TO92 Tape Orientation NCR169D N/A, Bulk NCR169DG N/A, Bulk NCR169DRLRA Round side of TO92 and adhesive tape visible NCR169DRLRAG Round side of TO92 and adhesive tape visible NCR169DRLRM Flat side of TO92 and adhesive tape visible NCR169DRLRMG Flat side of TO92 and adhesive tape visible NCR169DRLRP ...

Page 7

PACKAGE DIMENSIONS SEATING K PLANE NCR169D TO−92 (TO−226AA) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NCR169D N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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