THYRISTOR SCR 0.8A 30V TO-92

2N5060RLRMG

Manufacturer Part Number2N5060RLRMG
DescriptionTHYRISTOR SCR 0.8A 30V TO-92
ManufacturerON Semiconductor
TypeSCR
2N5060RLRMG datasheet
 


Specifications of 2N5060RLRMG

Scr TypeSensitive GateVoltage - Off State30V
Voltage - Gate Trigger (vgt) (max)800mVVoltage - On State (vtm) (max)1.7V
Current - On State (it (av)) (max)510mACurrent - On State (it (rms)) (max)800mA
Current - Gate Trigger (igt) (max)200µACurrent - Hold (ih) (max)5mA
Current - Off State (max)10µACurrent - Non Rep. Surge 50, 60hz (itsm)10A @ 60Hz
Operating Temperature-40°C ~ 110°CMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226Current - On State (it (rms) (max)800mA
Repetitive Peak Off-state Volt30VOff-state Voltage30V
Average On-state Current510mAHold Current5mA
Gate Trigger Current (max)200uAGate Trigger Voltage (max)800mV
Peak Reverse Gate Voltage5VPackage TypeTO-92
Peak Repeat Off Current10uAPeak Surge On-state Current (max)10A
On State Voltage(max)1.7@1.2AVMountingThrough Hole
Pin Count3Operating Temp Range-40C to 110C
Operating Temperature ClassificationIndustrialLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names2N5060RLRMG
2N5060RLRMGOSTB
  
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MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
= *40 to 110°C, Sine Wave,
J
50 to 60 Hz, R
= 1 kW)
2N5060
GK
2N5061
2N5062
2N5064
On-State Current RMS (180° Conduction Angles; T
*Average On-State Current
(180° Conduction Angles)
(T
= 67°C)
C
(T
= 102°C)
C
*Peak Non-repetitive Surge Current,
T
= 25°C
A
(1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
(180° Conduction Angles)
(T
= 67°C)
C
(T
= 102°C)
C
*Forward Peak Gate Power (Pulse Width v 1.0 msec; T
*Forward Average Gate Power (T
= 25°C, t = 8.3 ms)
A
*Forward Peak Gate Current (Pulse Width v 1.0 msec; T
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; T
*Operating Junction Temperature Range
*Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
DRM
RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
Symbol
= 80°C)
C
= 25°C)
A
= 25°C)
A
= 25°C)
A
Symbol
http://onsemi.com
2
Value
Unit
V
V
DRM,
V
RRM
30
60
100
200
I
0.8
A
T(RMS)
I
A
T(AV)
0.51
0.255
I
10
A
TSM
2
2
I
t
0.4
A
s
I
A
T(AV)
0.51
0.255
P
0.1
W
GM
P
0.01
W
G(AV)
I
1.0
A
GM
V
5.0
V
RGM
T
−40 to +110
°C
J
T
−40 to +150
°C
stg
Max
Unit
R
75
°C/W
qJC
R
200
°C/W
qJA