THYRISTOR SCR 8A 50V TO-220AB

 

C122F1G

Manufacturer Part NumberC122F1G
DescriptionTHYRISTOR SCR 8A 50V TO-220AB
ManufacturerON Semiconductor
C122F1G datasheets

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Specifications of C122F1G

Scr TypeStandard RecoveryVoltage - Off State50V
Voltage - Gate Trigger (vgt) (max)1.5VVoltage - On State (vtm) (max)1.83V
Current - On State (it (rms)) (max)8ACurrent - Gate Trigger (igt) (max)25mA
Current - Hold (ih) (max)30mACurrent - Off State (max)10µA
Current - Non Rep. Surge 50, 60hz (itsm)90A @ 60HzOperating Temperature-40°C ~ 125°C
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Current - On State (it (rms) (max)8ABreakover Current Ibo Max90 A
Rated Repetitive Off-state Voltage Vdrm50 VOff-state Leakage Current @ Vdrm Idrm0.01 mA
Forward Voltage Drop1.83 VGate Trigger Voltage (vgt)1.5 V
Gate Trigger Current (igt)25 mAHolding Current (ih Max)30 mA
Mounting StyleThrough HoleLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - On State (it (av)) (max)-Other namesC122F1G
C122F1GOS
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C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 200 Volts
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
= 25 to 100°C, Sine Wave,
J
50 to 60 Hz; Gate Open)
C122F1
C122B1
On-State RMS Current
(180° Conduction Angles; T
= 75°C)
C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
= 75°C)
C
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width = 10 ms, T
= 70°C)
C
Forward Average Gate Power
(t = 8.3 ms, T
= 70°C)
C
Forward Peak Gate Current
(Pulse Width = 10 ms, T
= 70°C)
C
Operating Junction Temperature Range
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
Symbol
Value
Unit
V
V
DRM,
V
RRM
50
200
I
8.0
A
T(RMS)
1
I
90
A
TSM
2
2
I
t
34
A
s
P
5.0
W
GM
P
0.5
W
G(AV)
I
2.0
A
GM
°C
T
−40 to +125
J
°C
T
−40 to +150
stg
C122F1
C122F1G
C122B1
C122B1G
1
http://onsemi.com
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
G
A
K
MARKING
DIAGRAM
4
A
TO−220AB
C122F1G
CASE 221A
AKA
STYLE 3
2
3
A
= Assembly Location
Y
= Year
W
= Work Week
C122F1
= Device Code
G
= Pb−Free Package
AKA
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
TO220AB
500 Units / Box
TO220AB
500 Units / Box
(Pb−Free)
TO220AB
500 Units / Box
TO220AB
500 Units / Box
(Pb−Free)
Publication Order Number:
C122F1/D
YW

C122F1G Summary of contents

  • Page 1

    ... T −40 to +150 stg C122F1 C122F1G C122B1 C122B1G 1 http://onsemi.com SCRs 8 AMPERES RMS 50 thru 200 VOLTS MARKING DIAGRAM 4 A TO−220AB C122F1G CASE 221A AKA STYLE Assembly Location Y = Year W = Work Week C122F1 = Device Code G = Pb−Free Package AKA = Diode Polarity PIN ASSIGNMENT 1 Cathode ...

  • Page 2

    THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated ...

  • Page 3

    Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

  • Page 4

    ... DIMENSION Z DEFINES A ZONE WHERE ALL American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 Y14.5M, 1982. BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES ...