MCR12LD ON Semiconductor, MCR12LD Datasheet

THYRISTOR SCR 12A 400V TO220AB

MCR12LD

Manufacturer Part Number
MCR12LD
Description
THYRISTOR SCR 12A 400V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCR12LD

Scr Type
Standard Recovery
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
2.2V
Current - On State (it (av)) (max)
7.6A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
8mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
100A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MCR12LDOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR12LD
Manufacturer:
ON
Quantity:
10 000
Part Number:
MCR12LDG
Manufacturer:
ON
Quantity:
30 000
MCR12LD, MCR12LM,
MCR12LN
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
October, 2008 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(180 Conduction Angles; T
Average On-State Current
(180 Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for half−wave ac control applications, such as
Ease of Design
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80 C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
High Immunity to dv/dt − 100 V/msec Minimum at 125 C
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2008
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
J
DRM
= −40 to 125 C, Sine Wave,
and V
C
RRM
1.0 ms, T
1.0 ms, T
= 80 C)
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
C
J
= 80 C)
= 80 C)
= 25 C unless otherwise noted)
C
C
Preferred Device
= 80 C)
= 80 C)
J
MCR12LM
MCR12LD
MCR12LN
= 125 C)
Symbol
I
P
V
V
T(RMS)
I
I
P
T(AV)
G(AV)
I
T
DRM,
TSM
RRM
I
GM
T
GM
2
stg
J
t
−40 to 125
−40 to 150
Value
400
600
800
100
7.6
5.0
0.5
2.0
12
41
1
A
Unit
2
W
W
V
A
A
A
A
sec
C
C
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
MCR12LNG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
ORDERING INFORMATION
400 thru 800 VOLTS
12 AMPERES RMS
A
Y
WW
x
G
AKA = Diode Polarity
A
http://onsemi.com
CASE 221A−09
PIN ASSIGNMENT
TO−220AB
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
STYLE 3
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SCRs
Publication Order Number:
Cathode
Anode
Anode
Gate
G
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MARKING
DIAGRAM
MCR12LxG
K
AY WW
Shipping
AKA
MCR12L/D

Related parts for MCR12LD

MCR12LD Summary of contents

Page 1

... MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Features Blocking Voltage to 800 Volts On−State Current Rating of 12 Amperes RMS High Surge Current Capability − ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated V and V ; Gate Open) ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

Page 4

CONDUCTION ANGLE 115 110 105 100 RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 5. Typical RMS Current Derating 100 ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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