TRANS NPN/PNP 45V 100MA SC-88

BC847BPN,125

Manufacturer Part NumberBC847BPN,125
DescriptionTRANS NPN/PNP 45V 100MA SC-88
ManufacturerNXP Semiconductors
Series-
BC847BPN,125 datasheet
 

Specifications of BC847BPN,125

Package / CaseSC-70-6, SC-88, SOT-363Transistor TypeNPN, PNP
Current - Collector (ic) (max)100mAVoltage - Collector Emitter Breakdown (max)45V
Vce Saturation (max) @ Ib, Ic300mV @ 5mA, 100mADc Current Gain (hfe) (min) @ Ic, Vce200 @ 2mA, 5V
Power - Max300mWFrequency - Transition100MHz
Mounting TypeSurface MountDc Collector/base Gain Hfe Min200
Gain Bandwidth Product Ft100 MHzMinimum Operating Temperature- 65 C
ConfigurationDualTransistor PolarityNPN/PNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max45 V
Emitter- Base Voltage Vebo5 VContinuous Collector Current100 mA
Maximum Dc Collector Current200 mAPower Dissipation400 mW
Maximum Operating Frequency100 MHzMaximum Operating Temperature+ 150 C
Current - Collector Cutoff (max)-Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names934042530125
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BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
Low collector capacitance
I
Low collector-emitter saturation voltage
I
Closely matched current gain
I
Reduces number of components and board space
I
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
Per transistor; for the PNP transistor with negative polarity
V
CEO
I
C
h
FE
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Quick reference data
Parameter
Conditions
collector-emitter voltage
open base
collector current
DC current gain
V
= 5 V; I
CE
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Product data sheet
Min
Typ
Max
-
-
45
-
-
100
= 2 mA
200
-
450
C
Simplified outline
Graphic symbol
6
5
4
TR1
1
2
3
Unit
V
mA
6
5
4
TR2
1
2
3
sym019

BC847BPN,125 Summary of contents

  • Page 1

    BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector ...

  • Page 2

    ... NXP Semiconductors 3. Ordering information Table 3. Type number BC847BPN 4. Marking Table 4. Type number BC847BPN [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity ...

  • Page 3

    ... NXP Semiconductors (1) FR4 PCB, mounting pad for collector 1 cm (2) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

  • Page 4

    ... NXP Semiconductors 0.75 th(j-a) (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration ...

  • Page 5

    ... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor; for the PNP transistor with negative polarity I CBO I EBO CEsat V BEsat [1] Pulse test: t BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor Characteristics Conditions collector-base cut-off current 150 C ...

  • Page 6

    ... NXP Semiconductors 600 h FE (1) 500 400 (2) 300 200 (3) 100 ( 150 C amb ( amb ( amb Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values 1200 V BE (mV) 1000 (1) 800 (2) 600 (3) 400 200 ( amb ( amb ( 150 C amb Fig 6. TR1 (NPN): Base-emitter voltage as a function of collector current ...

  • Page 7

    ... NXP Semiconductors CEsat (mV (1) ( 150 C amb ( amb ( amb Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 (Hz (mA Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values Rev. 04 — ...

  • Page 8

    ... NXP Semiconductors 600 ( 400 (2) 200 ( ( 150 C amb ( amb ( amb Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values 1200 1000 (1) 800 (2) 600 (3) 400 200 ( amb ( amb ( 150 C amb Fig 12. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values ...

  • Page 9

    ... NXP Semiconductors CEsat (mV ( ( 150 C amb ( amb ( amb Fig 14. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mld701 (Hz (mA Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values Rev. 04 — ...

  • Page 10

    ... NXP Semiconductors 8. Package outline Fig 16. Package outline SOT363 (SC-88) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description BC847BPN [1] For further information and the availability of packing methods, see [2] T1: normal taping ...

  • Page 11

    ... NXP Semiconductors 10. Soldering Fig 17. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 18. Wave soldering footprint SOT363 (SC-88) BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 04 — 18 February 2009 BC847BPN ...

  • Page 12

    ... Document ID Release date BC847BPN_4 20090218 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 4 • Section 7 • ...

  • Page 13

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 14

    ... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Legal information ...