BC847BPN,125 NXP Semiconductors, BC847BPN,125 Datasheet - Page 2

• Manufacturer Part Number: BC847BPN,125
• Description: TRANS NPN/PNP 45V 100MA SC-88
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BC847BPN,125

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Gain Bandwidth Product Ft: 100 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934042530125

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BC847BPN_4
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Type number
BC847BPN
Type number
BC847BPN
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
Per device
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Package
Name
SC-88
Rev. 04 — 18 February 2009
Description
plastic surface-mounted package; 6 leads
45 V, 100 mA NPN/PNP general-purpose transistor
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
T
p
p
amb
amb
1 ms
1 ms
25 C
25 C
Marking code
13*
[1]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
65
65
BC847BPN
© NXP B.V. 2009. All rights reserved.
Max
50
45
5
100
200
200
220
250
300
400
150
+150
+150
Version
SOT363
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
C
C
C
2
.
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