BC857BS,115 NXP Semiconductors, BC857BS,115 Datasheet

TRANSISTOR PNP 45V 100MA SC-88

BC857BS,115

Manufacturer Part Number
BC857BS,115
Description
TRANSISTOR PNP 45V 100MA SC-88
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857BS,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
2 PNP (Dual)
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934042510115::BC857BS T/R::BC857BS T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC857BS,115
Manufacturer:
NXP Semiconductors
Quantity:
6 700
Product data sheet
Supersedes data of 1997 Jul 09
DATA SHEET
BC857BS
PNP general purpose double
transistor
handbook, halfpage
DISCRETE SEMICONDUCTORS
MBD128
1999 Apr 26

Related parts for BC857BS,115

BC857BS,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage BC857BS PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jul 09 DISCRETE SEMICONDUCTORS MBD128 1999 Apr 26 ...

Page 2

... NXP Semiconductors PNP general purpose double transistor FEATURES • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. ...

Page 3

... NXP Semiconductors PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Per device R thermal resistance from junction to ambient th j-a Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor I collector cut-off current CBO I emitter cut-off current ...

Page 4

... NXP Semiconductors PNP general purpose double transistor 400 handbook, full pagewidth h FE 300 200 100 0 −2 −1 −10 −10 1999 Apr −5 V −1 −10 Fig.2 DC current gain; typical values 4 Product data sheet BC857BS MBH727 −10 2 − (mA) ...

Page 5

... NXP Semiconductors PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.10 0.8 OUTLINE VERSION IEC SOT363 1999 Apr scale 2.2 1.35 2.2 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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