BC847BPN,115 NXP Semiconductors, BC847BPN,115 Datasheet
BC847BPN,115
Specifications of BC847BPN,115
934042530115
BC847BPN T/R
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BC847BPN,115 Summary of contents
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BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector ...
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... NXP Semiconductors 3. Ordering information Table 3. Type number BC847BPN 4. Marking Table 4. Type number BC847BPN [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity ...
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... NXP Semiconductors (1) FR4 PCB, mounting pad for collector 1 cm (2) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors 0.75 th(j-a) (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor; for the PNP transistor with negative polarity I CBO I EBO CEsat V BEsat [1] Pulse test: t BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor Characteristics Conditions collector-base cut-off current 150 C ...
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... NXP Semiconductors 600 h FE (1) 500 400 (2) 300 200 (3) 100 ( 150 C amb ( amb ( amb Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values 1200 V BE (mV) 1000 (1) 800 (2) 600 (3) 400 200 ( amb ( amb ( 150 C amb Fig 6. TR1 (NPN): Base-emitter voltage as a function of collector current ...
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... NXP Semiconductors CEsat (mV (1) ( 150 C amb ( amb ( amb Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 (Hz (mA Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values Rev. 04 — ...
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... NXP Semiconductors 600 ( 400 (2) 200 ( ( 150 C amb ( amb ( amb Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values 1200 1000 (1) 800 (2) 600 (3) 400 200 ( amb ( amb ( 150 C amb Fig 12. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values ...
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... NXP Semiconductors CEsat (mV ( ( 150 C amb ( amb ( amb Fig 14. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mld701 (Hz (mA Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values Rev. 04 — ...
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... NXP Semiconductors 8. Package outline Fig 16. Package outline SOT363 (SC-88) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description BC847BPN [1] For further information and the availability of packing methods, see [2] T1: normal taping ...
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... NXP Semiconductors 10. Soldering Fig 17. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 18. Wave soldering footprint SOT363 (SC-88) BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 04 — 18 February 2009 BC847BPN ...
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... Document ID Release date BC847BPN_4 20090218 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 4 • Section 7 • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Legal information ...