PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet - Page 3

TRANS PNP 15V 1000MA SOT666

PBSS3515VS,115

Manufacturer Part Number
PBSS3515VS,115
Description
TRANS PNP 15V 1000MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515VS,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
200mW
Frequency - Transition
280MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
200 mW
Maximum Operating Frequency
280 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056767115
PBSS3515VS T/R
PBSS3515VS T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS3515VS,115
Manufacturer:
NXP Semiconductors
Quantity:
6 600
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2004 Dec 23
Per transistor unless otherwise specified
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
15 V low V
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to ambient
CE(sat)
PARAMETER
PNP double transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
3
notes 1 and 2
CONDITIONS
CONDITIONS
−65
−65
MIN.
VALUE
416
PBSS3515VS
−15
−15
−6
−500
−1
−100
200
+150
150
+150
300
MAX.
Product data sheet
UNIT
K/W
V
V
V
mA
A
mA
mW
°C
°C
°C
mW
UNIT

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