PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet - Page 4

TRANS PNP 15V 1000MA SOT666

PBSS3515VS,115

Manufacturer Part Number
PBSS3515VS,115
Description
TRANS PNP 15V 1000MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515VS,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
200mW
Frequency - Transition
280MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
200 mW
Maximum Operating Frequency
280 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056767115
PBSS3515VS T/R
PBSS3515VS T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS3515VS,115
Manufacturer:
NXP Semiconductors
Quantity:
6 600
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 23
Per transistor unless otherwise specified
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
15 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CE(sat)
PARAMETER
PNP double transistor
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= −10 mA; I
= −200 mA; I
= −500 mA; I
= −500 mA; I
= −500 mA; I
= −100 mA; V
= −5 V; I
= −15 V; I
= −15 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
CONDITIONS
4
C
C
C
C
C
E
E
B
E
= 0 A
= −10 mA
= −100 mA; note 1
= −500 mA; note 1
= −100 mA; note 1
B
B
B
B
= 0 A
= 0 A; T
= −0.5 mA
= I
CE
= −10 mA
= −50 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
e
= −5 V;
= 0 A; f = 1 MHz
j
= 150 °C
200
150
90
100
MIN.
300
280
PBSS3515VS
TYP.
Product data sheet
−100
−50
−100
−25
−150
−250
<500
−1.1
−0.9
10
MAX.
nA
μA
nA
mV
mV
mV
V
V
MHz
pF
UNIT

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