PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS3515VS,115
• Description: TRANS PNP 15V 1000MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515VS,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 280MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056767115; PBSS3515VS T/R; PBSS3515VS T/R

NXP Semiconductors
PACKAGE OUTLINE
2004 Dec 23
15 V low V
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
CE(sat)
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
PNP double transistor
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
JEITA
scale
1
7
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
L p
PBSS3515VS
c
X
Product data sheet
ISSUE DATE
04-11-08
06-03-16
SOT666