PBLS2021D,115 NXP Semiconductors, PBLS2021D,115 Datasheet

LOADSWITCH PNP 20V 1.8A SC-74

PBLS2021D,115

Manufacturer Part Number
PBLS2021D,115
Description
LOADSWITCH PNP 20V 1.8A SC-74
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBLS2021D,115

Package / Case
SC-74-6
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 1.8A
Voltage - Collector Emitter Breakdown (max)
50V, 20V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 5V / 200 @ 1A, 2V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (max)
1µA, 100nA
Frequency - Transition
130MHz
Power - Max
760mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 20 V
Continuous Collector Current
- 1.8 A
Peak Dc Collector Current
- 3 A
Power Dissipation
370 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061573115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
TR1; PNP low V
V
I
I
R
TR2; NPN resistor-equipped transistor
V
I
R1
R2/R1
C
CM
O
CEO
CEO
CEsat
PBLS2021D
20 V, 1.8 A PNP BISS loadswitch
Rev. 02 — 6 September 2009
Low V
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
Pulse test: t
CEsat
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
p
(BISS) and resistor-equipped transistor in one package
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
300 s;
transistor
0.02.
Conditions
open base
single pulse;
t
I
I
open base
p
C
B
= 100 mA
= 1.8 A;
1 ms
[1]
Min
-
-
-
-
-
-
1.54
0.8
Typ
-
-
-
78
-
-
2.2
1
Product data sheet
Max
117
50
100
2.86
1.2
20
1.8
3
Unit
V
A
A
m
V
mA
k

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PBLS2021D,115 Summary of contents

Page 1

PBLS2021D 20 V, 1.8 A PNP BISS loadswitch Rev. 02 — 6 September 2009 1. Product profile 1.1 General description PNP low V Equipped Transistor (RET SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBLS2021D 4. Marking Table 4. Type number PBLS2021D PBLS2021D_2 Product data sheet Pinning Description base TR1 input (base) TR2 output (collector) TR2 GND (emitter) TR2 collector TR1 emitter TR1 Ordering information ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1; PNP low V V CBO V CEO V EBO tot TR2; NPN resistor-equipped transistor V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per device R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 5

... NXP Semiconductors th(j- (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/ 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 6

... NXP Semiconductors th(j-a) (K/ 0. 0.50 0.33 0.20 0.10 10 0.05 0.02 0. Ceramic PCB standard footprint 2 3 Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table unless otherwise specified. amb Symbol TR1; PNP low V ...

Page 7

... NXP Semiconductors Table unless otherwise specified. amb Symbol V BEon off TR2; NPN resistor-equipped transistor I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ [1] Pulse test: t PBLS2021D_2 Product data sheet Characteristics …continued Parameter Conditions base-emitter turn-on voltage delay time mA; Bon rise time Boff ...

Page 8

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 100 C amb Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values ...

Page 9

... NXP Semiconductors 1 V CEsat ( ( 100 C amb ( amb ( amb Fig 9. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS2021D_2 Product data sheet ...

Page 10

... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values I(on) (V) 10 (1) ( amb ( amb ( 100 C amb Fig 14. TR2 (NPN): On-state input voltage as a function of collector current; typical values PBLS2021D_2 Product data sheet ...

Page 11

... NXP Semiconductors CEsat (mV (1) ( 100 C amb ( amb ( amb Fig 16. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PBLS2021D_2 Product data sheet 006aaa014 1 V CEsat ( (mA) C Fig 17. TR2 (NPN): Collector-emitter saturation Rev. 02 — 6 September 2009 PBLS2021D 20 V, 1.8 A PNP BISS loadswitch ...

Page 12

... NXP Semiconductors 8. Test information Fig 18. TR1: BISS transistor switching time definition Fig 19. TR1: Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications ...

Page 13

... NXP Semiconductors 9. Package outline Fig 20. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBLS2021D [1] For further information and the availability of packing methods, see [2] T1: normal taping ...

Page 14

... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date PBLS2021D_2 20090906 • Modifications: Table 7 PBLS2021D_1 20090622 PBLS2021D_2 Product data sheet Data sheet status Product data sheet “Characteristics”: I conditions amended CES Product data sheet Rev. 02 — 6 September 2009 PBLS2021D ...

Page 15

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 16

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 12 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 10 Packing information Revision history ...

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