TRANS DUAL PBRT PNP SOT-963

 

NSBA114TDP6T5G

Manufacturer Part NumberNSBA114TDP6T5G
DescriptionTRANS DUAL PBRT PNP SOT-963
ManufacturerON Semiconductor
NSBA114TDP6T5G datasheets

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Specifications of NSBA114TDP6T5G

Transistor Type2 PNP - Pre-Biased (Dual)Current - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)50VResistor - Base (r1) (ohms)10K
Dc Current Gain (hfe) (min) @ Ic, Vce160 @ 5mA, 10VVce Saturation (max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (max)500nAPower - Max408mW
Mounting TypeSurface MountPackage / CaseSOT-963
Lead Free Status / RoHS StatusLead free / RoHS CompliantFrequency - Transition-
Resistor - Emitter Base (r2) (ohms)-  
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NSBA114EDP6T5G Series
Preferred Devices
Dual Digital Transistors
(BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−963 package which is designed for low power surface mount
applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−963 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
These are Halide−Free Devices
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 5
Symbol
Value
Unit
V
50
Vdc
CBO
V
50
Vdc
CEO
I
100
mAdc
C
1
http://onsemi.com
(3)
(2)
(1)
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
MARKING
DIAGRAM
XM
SOT−963
1
CASE 527AD
X
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NSBA114EDP6T5G
SOT−963
8000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBA114EDP6/D

NSBA114TDP6T5G Summary of contents

  • Page 1

    NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor ...

  • Page 2

    ... NSBA143ZDP6T5G K (90°) NSBA123JDP6T5G P (90°) NSBA144WDP6T5G J (90°) NSBA114TDP6T5G T (180°) NSBA115TDP6T5G V (180°) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. ...

  • Page 3

    ... NSBA123JDP6T5G NSBA144WDP6T5G = (BR)CBO V (BR)CEO NSBA114EDP6T5G h FE NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA114TDP6T5G = 10 mA 0.3 mA CE(sat NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144EDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G = 1.0 kW http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − ...

  • Page 4

    ... ELECTRICAL CHARACTERISTICS Characteristic Input Resistor Resistor Ratio NSBA114EDP6T5G/NSBA124EDP6T5G NSBA144EDP6T5G/NSBA143EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G/NSBA114TDP6T5G/ NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G (T = 25°C unless otherwise noted) (Continued) A Symbol NSBA114TDP6T5G R1 NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G http://onsemi.com 4 Min Typ Max Unit ...

  • Page 5

    TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EDP6T5G 1 25° COLLECTOR CURRENT (mA) C Figure 1. V vs. I CE(sat) 2.4 ...

  • Page 6

    ... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...